摘要
文中设计并实现一款适用于S波段和C波段(2～8 GHz)的超宽带低噪声放大器(LNA)。该低噪声放大器选用三菱公司InGaAs HEMT晶体管MGF4941AL,采用并联负反馈的三级级联放大结构,有效提高了增益和带内匹配。三级电路均采用电阻自偏压方式实现单电源供电,并且加入了正电延时模块确保晶体管正常工作。测试结果表明,在2～8 GHz频率范围内,输入反射系数S_(11)和输出反射系数S_(22)分别小于-8.5 dB和-7.7 dB,正向增益S_(21)大于21 dB,噪声系数小于3.6 dB。
A UWB low noise amplifier(LNA)suitable for S.band and C.band(2~8 GHz)was designed and implemented.The InGaAs HEMT MGF4941AL made by Mitsubishi is selected as the low noise amplifier.A three-level cascade amplification topology with parallel negative feedback structure is adopted in LNA to improve the gain and in-band matching.The self-biased resistance is used in the three-level circuit to realize the single power supply,and a positive electricity time.delay module is added into the circuit to protect the transistors.The test results show that,within the range of 2~8 GHz,the input reflection coefficient S11 and output reflection coefficient S22 of LNA is less than-8.5 dB and-7.7 dB respectively,the forward gain S21 is greater than 21 dB,and the noise coefficient is less than 3.6 dB.
作者
吴晓文
陈晓东
刘轶
WU Xiaowen;CHEN Xiaodong;LIU Yi(Shanghai Advanced Research Institute,Chinese Academy of Sciences,Shanghai 201210,China;University of Chinese Academy of Sciences,Beijing 100049,China;Fudan University,Shanghai 201210,China)
出处
《现代电子技术》
北大核心
2019年第7期108-111,共4页
Modern Electronics Technique
基金
中国亚太经合组织合作基金(Y6260P1401)~~
