摘要
以Ti/Si/C,Ti/SiC/C和Ti/Si/TiC粉为原料体系,采用真空热压烧结制备纯样Ti_3SiC_2,通过XRD和SEM研究了不同原料体系和烧结温度对试样相组成、致密度及显微结构的影响。研究表明:烧结温度为1550℃时,Ti/Si/TiC体系制备的纯样Ti_3SiC_2主晶相为Ti_3SiC_2,第二相为TiC,Ti_3SiC_2相含量为94%,为各试样中最高,Ti_3SiC_2材料较其他试样致密且Ti_3SiC_2晶粒发育成均匀良好的板状晶粒,粒径约为20μm;制备纯度较高的Ti_3SiC_2材料需要提高Ti/Si/C,Ti/SiC/C原料体系的烧结温度。
The Ti3SiC2 ceramic material was synthesized by hot-pressing sintering process with Ti-Si-C,Ti-SiC-C and Ti-Si-TiC systems as raw materials respectively. The effects of raw material system and sintering temperature on the phase constituent,densification and microstructure of samples were studied by XRD and SEM. The results show that when the sintering temperature is 1550 ℃,the phase content of Ti3SiC2 reached the highest value of 94 wt% from Ti/Si/TiC systems.The Ti-Si-TiC material is mainly composed of two phases of Ti3SiC2 and TiC. Plate-like Ti3SiC2 grains are well developed with a particle size of about 20 μm. Increasing the sintering temperature favors the formation of Ti3SiC2 in Ti-SiC-C and TiSi-C systems.
作者
贾换
尹洪峰
袁蝴蝶
孙召英
JIA Huan;YIN Hongfeng;YUAN Hudie;SUN Zhaoying(Xi'an Siyuan University,Xi'an 710038,China;Xi'an University of Architecture & Technology,Xi'an 710055,China)
出处
《中国陶瓷》
CAS
CSCD
北大核心
2019年第2期34-38,共5页
China Ceramics
基金
陕西教育厅专项科研基金(18JK1101)
