摘要
基于SiC衬底的0.25μm GaN HEMT工艺,设计了一款X～Ku波段宽带1W驱动放大器单片微波集成电路。设计使用了一种有源器件的大信号输出阻抗的等效RC模型验证了GaN HEMT工艺模型的准确性,并获得了不同尺寸的GaN HEMT的大信号输出阻抗。第一级管芯采用负反馈结构,降低匹配网络的Q值,通过带通匹配网络拓扑,实现了宽带匹配。测试结果表明,在28V的工作电压下,8～18GHz的频率内驱动放大器实现了输出功率大于30dBm,功率附加效率大于21%,功率增益大于15dB。芯片尺寸为:2.20mm×1.45mm。该芯片电路具有频带宽、效率高、尺寸小的特点,主要用于毫米波收发组件、无线通讯等领域,具有广泛的应用前景。
In this paper,an X^Ku band broadband 1 W driver amplifier MMIC based on 0.25 μm GaN HEMT on SiC process is designed. The design uses an equivalent RC model of active devices’ large- signal output impedance for verifying the accuracy of the GaN HEMT process model.And large-signal output impedances of GaN HEMT with different dimensions are achieved.Negative feedback structure is applied for the first-stage transistor to reduce the Q value of the matching network.The broadband matching is successfully achieved through band-pass matching network topology.The measurement results show that this driver amplifier at 28 V operation voltage achieved over 30 dBm output power,21% power added efficiency and 15 dB power gain from 8 GHz to 18 GHz.The chip size is 2.20 mm×1.45 mm.The MMIC chip has the characteristics of wide bandwidth,high efficiency and small size.It can be mainly used in fields such as millimeter- wave transceiver components and wireless communication,and has broad application prospect.
作者
周守利
陈瑞涛
周赡成
李如春
Zhou Shouli;Chen Ruitao;Zhou Shancheng;Li Ruchun(College of Information Engineering,Zhejiang University of Technology,Hangzhou 310023,China)
出处
《强激光与粒子束》
EI
CAS
CSCD
北大核心
2019年第3期21-25,共5页
High Power Laser and Particle Beams
基金
中国科学院空间科学战略性科技先导专项基金项目(XDA04060300)
中国博士后科学基金项目(2013M540147)
