摘要
SOI技术作为一种全介质隔离技术,有着许多体硅器件不可比拟的优势,如低功耗(泄漏电流小)、速度快(寄生电容小)、抗干扰强、集成密度高(隔离面积小)等特点。经过几十年的发展,SOI材料的制备技术,直接键合和智能剥离技术成为现阶段的主流技术。SOI元器件的特征尺寸,由1μm跨越到12 nm,得到广泛应用,涵盖射频、汽车电子、电源管理等领域。虽然由于历史原因以及SOI技术本身的一些限制,导致SOI技术没有完全超越传统体硅技术。分析SOI技术的发展历史、材料制备、技术应用、面临的挑战及未来趋势。
SOI technology has many advantages that are incomparable to bulk silicon devices,such as low power consumption(small leakage),fast speed(small parasitic capacitance),strong antiinterference,high integration density(small isolation area).After decades of development,SOI material preparation technology,WB and Smart-cut technology have become mainstream technologies.The critical dimension of SOI is from 1μm to 12 nm,they are widely used in RF,automotive electronics,power management and other fields.Although due to historical reasons and some limitations of SOI technology itself,SOI technology has not completely surpassed the traditional bulk silicon technology now.This paper analyzes the history of SOI technology development,material technology,application,challenges and future trends.
作者
宁开明
NING Kaiming(TSMC China Ltd,Shanghai 201616,China)
出处
《集成电路应用》
2019年第6期17-21,共5页
Application of IC
基金
上海市科学技术委员会集成电路研发基金(11511107100)
