摘要
为控制单晶锗脆塑转变临界状态,基于公式对单晶锗脆塑转变时的临界载荷进行了预测,采用纳米压痕仪对单晶锗(110)晶面进行了变载荷纳米划痕实验和恒定载荷纳米划痕实验,分析得到单晶锗(110)晶面发生脆塑转变时的临界状态,并借助原子力显微镜(AFM)对实验表面进行扫描表征。结果表明,单晶锗(110)晶面在变载荷纳米划痕实验下发生脆塑转变的临界载荷和临界深度分别为41.4mN、623nm;单晶锗(110)晶面在恒定载荷纳米划痕实验下发生脆塑转变的临界载荷和临界深度分别为30~50mN、500~900nm,验证了变载荷纳米划痕实验结果的正确性。根据变载荷纳米划痕实验结果修正了单晶锗(110)晶面在固定实验参数下发生脆塑转变临界深度理论计算公式,为分析单晶锗微纳米尺度塑性域切削提供数据支持。
In order to control the critical state of brittle-plastic transition of single crystal germanium.The critical load of brittle-plastic transition of single crystal germanium is predicted based on the formula.Variable load and constant load nano-scratch experiments on Ge(110)are performed by using a nano indentation device,and the critical state of brittle-plastic transition of Ge(110)is obtained.Moreover,the experimental surfaces is scanned by using atomic force microscopy(AFM).The results show that:under the variable load nano-scratch experiment,the critical load for the brittle-plastic transition of Ge(110)is 41.4 mN,and the critical depth is 623 nm;Under the constant load nano-scratch experiment,critical load of the brittle-plastic transition of Ge(110)is 30 to 50 mN,and the critical depth is 500 to 900 nm,which verifies the correctness of the experimental results of variable load scratches.According to the results of variable load nano-scratch experiment,the theoretical formula for the critical depth of brittle-plastic transition of Ge(110)is revised under fixed experimental parameters,which provides data support for the analysis of single-crystal germanium microscale plastic field cutting.
作者
杨晓京
刘浩
赵彪
余证
YANG Xiaojing;LIU Hao;ZHAO Biao;YU Zheng(Faculty of Mechanical and Electrical Engineering, Kunming University ofScience and Technology, Kunming 650500, China)
出处
《有色金属工程》
CAS
北大核心
2019年第6期12-16,共5页
Nonferrous Metals Engineering
基金
国家自然科学基金资助项目(51765027)~~
关键词
单晶锗
脆塑转变
临界深度
临界载荷
变载荷纳米划痕实验
恒定载荷纳米划痕实验
single crystal germanium
brittle-plastic transition
critical depth
critical load
nano-scratch experiment of variable load
nano-scratch experiment with constant load
