摘要
以(96.0-x)ZnO-2.0Pr6O11-0.5Sb2O3-0.5Co2O3-0.5Cr2O3-0.5Y2O3-xSiO2为配方制备压敏电阻陶瓷,其中比例均为物质的量比,x分别为0.0%、0.8%、1.6%、2.4%。研究了SiO2的掺杂浓度对该体系压敏电阻陶瓷微观结构和电学性能的影响。研究表明,压敏电阻陶瓷的主晶相为六方纤锌矿型结构,同时还含有SbYO3、ZnCr2O4、ZnCo2O4、Zn7SbO12、Zn2SiO4和Pr2O3等晶相。随着SiO2掺杂浓度的增大,ZnO压敏陶瓷的三个强衍射峰逐渐向低角度方向偏移,平均晶粒尺寸先减小后增大。当掺杂浓度为1.6%时,平均晶粒尺寸达到最小值(1.5μm),击穿场强E1mA达到最大值(385.6V/mm),非线性系数α达到最大值(84.2),漏电流IL达到最小值(1.1μA)。通过分析烧结机理、固溶体形成机理以及能量最低原理,本工作对以上现象进行了理论解释。
The influences of SiO 2 doping concentrations on the microstructures and electrical properties of(96.0-x)ZnO-2.0Pr 6O 11-0.5Sb 2O 3-0.5Co 2O 3-0.5Cr 2O 3-0.5Y 2O 3-x SiO 2 system varistor ceramics had been researched in detail,wherein x was 0.0%,0.8%,1.6%,2.4%respectively,and all the proportion were as molar presents.The results showed that the lattice structure of the main crystal phase was hexagonal wurtzite structure.With the increase of SiO 2 concentrations,the three strong diffraction peaks of ZnO varistor ceramics moved to lower angles gradually,the average grain size decreased at first and then increased.As the SiO 2 concentration was 1.6%,the following results were obtained:The average grain size reached the minimum value of 1.5μm;the breakdown field strength E 1mA was 385.6 V/mm and nonlinear coefficientαreached the maximum value of 84.2;the leakage current I L reached the minimum value of 1.1μA.The above phenomena were explained systematically by analyzing the sintering mechanism,formation mechanism of solid solution and principle of lowest energy.
作者
陈永佳
刘建科
CHEN Yongjia;LIU Jianke(Shaanxi Institute of Technology,Xi’an 710300;School of Arts and Sciences,Shaanxi University of Science and Technology,Xi’an 710021)
出处
《材料导报》
EI
CAS
CSCD
北大核心
2019年第A01期161-164,共4页
Materials Reports
基金
陕西省教育厅2018年度专项科学研究计划项目(18JK0068)~~
关键词
ZNO压敏陶瓷
SiO2掺杂
微观结构
电学性能
烧结机理
ZnO varistor ceramics
SiO 2 doping
microstructure
electrical properties
sintering mechanism
