摘要
设计了一款毫米波GaAs单片限幅低噪声放大器。限幅器采用两级反向并联二极管结构,通过优化限幅器匹配电路,增大了限幅器的耐功率,降低了限幅电路的插损。低噪声放大器为四级级联设计,输入端采用最小噪声匹配,偏置电路增加RC串联谐振电路,减小了噪声,提高了电路稳定性。测试结果表明,该毫米波GaAs单片限幅低噪声放大器在33~37GHz频带内,增益达到22dB,增益平坦为±1dB,输入驻波小于2,输出驻波小于1.5,噪声小于3.0dB,输出1dB增益压缩点(P1dB)大于5dBm,可以承受15W的脉冲输入功率。
A millimeter wave GaAs MMIC limiter low noise amplifier was designed. The limiter had two-stage reverse parallel PIN diode structure. The matching circuit of the limiter was optimized to increase the power endurance and reduce the insertion loss of limiter circuit. The low noise amplifier had four-stage structure. The minimum noise matching was employed in the pHEMT input port. RC series resonance network was added in the bias circuit to reduce the noise figure and improve the stability of the low noise amplifier. The test results show that the small signal gain of the millimeter wave GaAs MMIC limiter low noise amplifier is higher than 22 dB,flatness is ±1 dB, input VSWR is below 2 and output VSWR is below 1.5, the noise figure is below 3.0 dB and the output P1 dB is higher than 5 dBm at 33~37 GHz. The limiter low noise amplifier can endure 15 W input pulse power.
作者
贾晨阳
彭龙新
刘昊
凌志健
李建平
韩方彬
JIA Chenyang;PENG Longxin;LIU Hao;LING Zhijian;LI Jianping;HAN Fangbin(Nanjing Electronic Devices Institute,Nanjing,210016,CHN;Science and Technology on Monolithic Integrated Circuits and Modules Laboratory,Nanjing 9210016,CHN)
出处
《固体电子学研究与进展》
CAS
北大核心
2019年第3期169-173,共5页
Research & Progress of SSE
