摘要
The lightly Sn-doped Bi1.1Sb0.9Te2S is a good material to investigate the pure topological surface state because the bulk bands are far away from the Fermi level. By measuring point-contact tunneling spectra on the topological insulator Bi1.08Sn0.02Sb0.9Te2S samples with a superconducting Nb tip, we observed the suppression of differential conductance near zero bias, instead of the enhancement due to Andreev reflection on the spectra. The fitting to the measured spectrum results in a superconducting gap of more than 4 meV, and this value is much larger than the superconducting gap of the bulk Nb. The gaped feature exists at temperatures even above the critical temperature of bulk Nb, and is visible when the magnetic field is as large as 9 T at 3 K. We argue that such behaviors may be related to the pressure induced superconductivity by the tip in the junction area, or just some novel phenomena arising from the junction between an s-wave superconductor and an ideal topological insulator.
The lightly Sn-doped Bi1.1Sb0.9Te2S is a good material to investigate the pure topological surface state because the bulk bands are far away from the Fermi level. By measuring point-contact tunneling spectra on the topological insulator Bi1.08Sn0.02Sb0.9Te2S samples with a superconducting Nb tip, we observed the suppression of differential conductance near zero bias, instead of the enhancement due to Andreev reflection on the spectra. The fitting to the measured spectrum results in a superconducting gap of more than 4 meV, and this value is much larger than the superconducting gap of the bulk Nb. The gaped feature exists at temperatures even above the critical temperature of bulk Nb, and is visible when the magnetic field is as large as 9 T at 3 K. We argue that such behaviors may be related to the pressure induced superconductivity by the tip in the junction area, or just some novel phenomena arising from the junction between an s-wave superconductor and an ideal topological insulator.
基金
supported by the National Key R&D Program of China(Grant No.2016YFA0300401)
the National Natural Science Foundation of China(Grant No.11534005)
