摘要
Direct epitaxial growthⅢ–Ⅴquantum dot(QD)structures on CMOS-compatible silicon substrates is considered as one of the most promising approaches to achieve low-cost and high-yield Si-based lasers for silicon photonic integration.However,epitaxial growth ofⅢ–Ⅴmaterials on Si encounters the following three major challenges:high density of threading dislocations,antiphase boundaries and thermal cracks,which significantly degrade the crystal quality and potential device performance.In this review,we will focus on some recent results related to InAs/GaAs quantum dot lasers on Si(001)substrates byⅢ–Ⅴ/Ⅳhybrid epitaxial growth via(111)-faceted Si hollow structures.Moreover,by using the step-graded epitaxial growth process the emission wavelength of InAs QDs can be extended from O-band to C/L-band.High-performance InAs/GaAs QD microdisk lasers with sub-milliwatts threshold on Si(001)substrates are fabricated and characterized.The above results pave a promising path towards the on-chip lasers for optical interconnect applications.
Direct epitaxial growth Ⅲ–Ⅴ quantum dot(QD) structures on CMOS-compatible silicon substrates is considered as one of the most promising approaches to achieve low-cost and high-yield Si-based lasers for silicon photonic integration.However, epitaxial growth of Ⅲ–Ⅴ materials on Si encounters the following three major challenges: high density of threading dislocations, antiphase boundaries and thermal cracks, which significantly degrade the crystal quality and potential device performance. In this review, we will focus on some recent results related to InAs/GaAs quantum dot lasers on Si(001) substrates by Ⅲ–Ⅴ/IV hybrid epitaxial growth via(111)-faceted Si hollow structures. Moreover, by using the step-graded epitaxial growth process the emission wavelength of InAs QDs can be extended from O-band to C/L-band. High-performance InAs/GaAs QD microdisk lasers with sub-milliwatts threshold on Si(001) substrates are fabricated and characterized. The above results pave a promising path towards the on-chip lasers for optical interconnect applications.
基金
financial support was provided by the National Natural Science Foundation of China (Nos. 61635011, 11574356, 11434010, 61804177 and 11804382)
National Key Research and Development Program of China (Nos. 2016YFA0300600 and 2016YFA0301700)
Key Research Program of Frontier Sciences, CAS (No. QYZDB-SSW-JSC009)
Ting Wang was supported by the Youth Innovation Promotion Association of CAS (No. 2018011)
