摘要
A novel approach of two-step laser crystallization for the growth of poly-Si thin film on glass substrate is investigated. Using this approach, we fabricated poly-Si thin film transistors with electron mobility of 103 cm2/V·s and on/off current ratio of 1×10~7.They are better than those of the poly-Si TFTs fabricated by conventional single-step excimer laser crystallization. We also analyzed the structure of the laser crystallized poly-Si thin film by spectroscopic ellipsometry, and proposed the models to simulate the poly-Si thin film and calculated the ellipsometric spectra. The calculated results are in good agreement with the measured results.
A novel approach of two-step laser crystallization for the growth of poly-Si thin film on glass substrate is investigated.Using this approach,we fabricated poly-Si thin film transistors with electron mobility of 103 cm^2/V·s and on/off current ration of 1×10^7,They are better than those of the poly-Si TFTs fabricated by conventional single-step excimer laser crystallization.We also analyzed the structure of the laser crysallized poly-Si thin film and calculated the ellipsometric spectra.The calculated results are in good agreement with the measured results.
