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Photoluminescence Spectra of Disordered and Ordered Ga_(0.52)In_(0.48)P 被引量:1

Photoluminescence Spectra of Disordered and Ordered Ga 0.52 In 0.48 P
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摘要 Temperature-dependence and excitation-intensity-dependence of photoluminescence spectra for both disordered and ordered Ga 0.52 In 0.48 P are measured. The disordered sample is characterized by its single peak photoluminescence spectrum which is excitation-intensity independent and has different activation energy at different temperature region. The ordered sample shows double peaks, the intensity of the high-energy peak has an anomalous increase firstly and quenches afterwards. The relative phenomena are reasonably explained in terms of lattice ordering and orientation superlattice model. Temperature-dependence and excitation-intensity-dependence of photoluminescence spectra for both disordered and ordered Ga 0.52 In 0.48 P are measured. The disordered sample is characterized by its single peak photoluminescence spectrum which is excitation-intensity independent and has different activation energy at different temperature region. The ordered sample shows double peaks, the intensity of the high-energy peak has an anomalous increase firstly and quenches afterwards. The relative phenomena are reasonably explained in terms of lattice ordering and orientation superlattice model.
出处 《Semiconductor Photonics and Technology》 CAS 1999年第3期139-142,151,共5页 半导体光子学与技术(英文版)
基金 The National Science Foundation of China
关键词 PHOTOLUMINESCENCE Semiconductor Materials Spectra CLC number:O472.3 Document code:A 光致发光 半导体材料 光谱
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参考文献3

  • 1Mascarenhas A,Solid State Commun,1996年,100卷,1期,47页
  • 2Dong Jianrong,Appl Phys Lett,1995年,67卷,11期,1573页
  • 3Su L C,Appl Phys Lett,1994年,65卷,6期,749页

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