摘要
采用固相反应法在 82 3K温度下分别制备出了掺入 0 .1%和 0 .4%Te(摩尔分数 ,下同 )的Mg2 Si化合物 ,并对掺Te对化合物结构和热电特性的影响进行了研究。结果表明 :通过对Mg2 Si基体的掺杂可以大幅度提高Mg2 Si基热电材料的整体热电性能。掺入 0 .4%Te试样的优值系数在 5 0 0K时达到 2 .4× 10 - 3W/(m·K2 ) ,比未掺杂的Mg2 Si试样提高了 1.
Mg 2Si based compounds doped by 0.1% and 0.4%(in mole)of Te were synthesized via the solid_state reaction at 823 K. The effects of doping Te on crystal structure and thermoelectric properties of Mg 2Si_based compounds were studied. The results show that the thermoelectric properties were significantly improved. The figure of merit of the specimens of Te_doped by 0.4% reaches 2.4×10 -3 W/(m·K 2) at 500 K, which was increased by 1.4 times in comparison with that of the nondoped.
出处
《硅酸盐学报》
EI
CAS
CSCD
北大核心
2002年第5期550-553,共4页
Journal of The Chinese Ceramic Society
基金
武汉市国际合作资助项目 (2 0 0 0 70 10 10 8)
