摘要
在研制超高电流增益AlGaAs/GaAs HBT的基础上,对有N^+-i-P型发射结的HBT的漏电特性做了实验研究,研制出的HBT具有较好的小电流特性.还分析了N^+i-p型结构的特点及HBT外基区表面漏电的产生机理.
An AlGaAs/GaAs HBT with a super high current gain—about 1000 is fabricated. To reduce the recombination current, a structure of N^+-i-P type is used as the emitter-base junction. It's characteristics is discussed. The mechanism of the recombination process at the extra base region for HBT is analysised based on the experimetal results.
出处
《北京师范大学学报（自然科学版）》
CAS
CSCD
1992年第4期467-471,共5页
Journal of Beijing Normal University(Natural Science)
基金
国家自然科学基金
