摘要
分析了MOSFET静电损伤的机理 ,发现在静电应力期间 ,随着应力次数的增加 ,在SiO2 体内和Si/SiO2 界面同时产生潜在损伤积累 .Si/SiO2 界面较SiO2 层体内更容易产生缺陷 ,而且缺陷浓度更大 .用逾渗理论模拟了MOSFET中 1/f噪声与边界陷阱浓度的关系 ,得出了与实验相一致的定性结果 ,为MOSFET静电潜在损伤的沟道漏源电流 1/f噪声检测方法提供了理论依据 .
On the basis of analysis of the physical mechanism of ESD degradation mechanism of MOSFET, it is found that both in the SiO 2 body and the local area of the Si/SiO 2 interface defects are induced and accumulated during ESD stress. Moreover, the concentration of defects induced and accumulated in the local area of the Si/SiO 2 interface is much heavier than that in the SiO 2 body, for the creation of a defect in the local area of Si/SiO 2 interface is easier than in the SiO 2 body. The relationship between defect concentration and channel conductance 1/f noise magnitudes is obtained by a percolation computer simulation based on a random resistor network (RRN). The results obtained agree well with experimental results. The work done above provides a theoretical basis for 1/f noise testing technique of ESD latent damages in MOSFET.
出处
《西安电子科技大学学报》
EI
CAS
CSCD
北大核心
2002年第5期575-579,共5页
Journal of Xidian University
基金
国家自然科学基金资助项目 (696710 0 3 )
