摘要
SiC MOSFET高频、高效、高功率密度的特性符合光伏逆变器的发展趋势,但随之而来的开关振荡问题亟待解决。开关频率提升后,由于开关振荡的存在,可能导致高频下的并网电流波形质量下降,因此需要建立精准的模型来为SiC MOSFET在光伏逆变器中的应用提供指导。目前的SiC MOSFET模型大多基于Pspice的仿真环境建立的,不能用于包含复杂的电路拓扑和控制算法的仿真研究。基于Saber环境提出一种可以将SiC MOSFET与光伏逆变器结合的模型,通过双脉冲实验得出SiC MOSFET的器件特性,对SiC MOSFET的静态特性和非线性电容进行建模。最后将模型运用到光伏并网逆变器中,将仿真结果与搭建的光伏并网逆变器实验平台实测结果进行对比,并对SiC光伏并网逆变器在不同开关频率情况下的性能进行分析和研究,验证了模型的准确性和适用性。
The high frequency,high efficiency and high power density characteristics of SiC MOSFET meet the development trend of PV inverter.However,the switching oscillation that comes with it needs to be solved urgently.Due to the existence of switching oscillations,the quality of gridconnected current waveform may be reduced after the switching frequency is increased.Therefore,an accurate model is necessary to provide guidance for the application of SiC MOSFET in PV inverter.Most of the current SiC MOSFET models are built on the Pspice simulation environment and cannot be used for simulation studies involving complex circuit topologies and control algorithms.Based on the Saber environment,a model combining SiC MOSFET with PV inverter is proposed in this paper.The device characteristics of SiC MOSFET are obtained by double pulse experiments,and the static characteristics and nonlinear capacitance of SiC MOSFET are modeled.Finally,the model is applied to PV grid-connected inverter,and the simulation results are compared with the measured results of the photovoltaic grid connected inverter test bench.The performance of the SiC PV grid-connected inverter under different switching frequencies is analyzed,which verifies the accuracy and applicability of the model.
作者
周林
李寒江
解宝
李海啸
聂莉
Zhou Lin;Li Hanjiang;Xie Bao;Li Haixiao;Nie Li(State Key Laboratory of Power Transmission Equipment&System Security and New Technology,Chongqing University,Chongqing,400044,China)
出处
《电工技术学报》
EI
CSCD
北大核心
2019年第20期4251-4263,共13页
Transactions of China Electrotechnical Society
基金
国家自然科学基金重点资助项目(51477021)
