摘要
Ga2O3是一种新兴的超宽禁带半导体材料,具有超宽带隙4.8 eV、超高理论击穿电场8 MV/cm以及超高的Baliga品质因数等优良特性,作为下一代高功率器件材料其越来越受到人们的关注。首先,回顾了宽禁带半导体材料β-Ga2O3的基本性质,包括β-Ga2O3的晶体结构和电学性质,简述了基于β-Ga2O3制造的功率器件,主要包括肖特基势垒二极管(SBD)和金属-氧化物-半导体场效应晶体管(MOSFET)。总结回顾了β-Ga2O3SBD和MOSFET近年来的研究进展,比较了不同结构器件的特性,并分析了目前β-Ga2O3功率器件存在的问题。分析表明,β-Ga2O3用于高功率和高压电子器件具有巨大潜力。
β-Ga2O3 is an emerging ultra-wide bandgap semiconductor material with excellent characteristics,such as the ultra-wide bandgap of 4.8 eV,ultra-high theoretical breakdown electric field of 8 MV/cm and ultra-high Baligaquality factor,and draws more and more attention as the next generation high-power device material.Firstly,the basic properties of β-Ga2O3,a wide bandgap semiconductor material,are reviewed including the crystal structure and electrical properties of β-Ga2O 3.Besides,the power devices based on β-Ga2O3 are briefly described,mainly including Schottky barrier diodes(SBDs)and metal-oxide-semiconductor field effect transistors(MOSFETs).The recent developments of β-Ga2O3 SBDs and MOSFETs are reviewed,the characteristics of different structural devices are compared,and current existing problems of β-Ga2O3 power devices are analyzed.The analysis shows that β-Ga2O3 has great potential for high power and high voltage electronic devices.
作者
刁华彬
杨凯
赵超
罗军
Diao Huabin;Yang Kai;Zhao Chao;Luo Jun(Integrated Circuit Advanced Process R&D Center,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;University of Chinese Academy of Sciences,Beijing 100049,China;School of Microelectronics,University of Science and Technology of China,Hefei 230000,China)
出处
《微纳电子技术》
北大核心
2019年第11期875-887,901,共14页
Micronanoelectronic Technology
