摘要
采用射频磁控溅射技术,在不同氮氧比条件下,经过退火处理制备了N掺杂ZnO∶Al薄膜。对样品进行X射线衍射(XRD)、探针扫描显微镜(FAM)、透过率和电阻测试。结果表明:薄膜表面呈现柱状结构,当氮氧比为9∶1时,c轴择优取向最强。在可见光(500~800 nm)范围内,平均透过率都达到了90%以上。随着氮氧比增大,薄膜电阻先增大后减小,后又略微增大。当氮氧比由3∶1增加到9∶1时,由于N作为施主和受主掺杂的浓度不同,薄膜实现了由n型导电转变为p型导电。
N-doped ZnO:Al films were deposited by RF magnetron sputtering and annealing under different nitrogen-oxygen ratios.The samples were characterized with X-ray diffraction(XRD),probe scanning microscope(FAM),transmittance and electrical resistance.The results showed that the surface of the film took on columnar structure growth,and the c-axis’preferred orientation was the strongest when the nitrogen-oxygen ratio was 9:1.The average visible(500~800 nm)transmittance was more than 90%.With the increase of nitrogen-oxygen ratio,the film resistance first increased and then decreased;later,the film resistance slightly increased.When the nitrogen-oxygen ratio increased from 3:1to 9:1,because of different concentrations of N as donor and acceptor,the thin film could be changed from n-typed conduction to p-typed one.
作者
高立华
高松华
陈礼炜
GAO Lihua;GAO Songhua;CHEN Liwei(Key Laboratory of Equipment Intelligence Control of Fujian Province,Sanming 365004,China;School of Mechanical&Electrical Engineering,Sanming University,Sanming 365004,China)
出处
《新乡学院学报》
2019年第12期16-18,26,共4页
Journal of Xinxiang University
基金
国家自然科学基金项目(11804189)
福建省自然科学基金项目(2017J01714)
关键词
氮氧比
施主
受主
光电性能
nitrogen-oxygen ratios
donor defect
acceptor defect
photoelectric property
