摘要
对于不同工作模式下的绝缘栅双极晶体管(IGBT)的热退化特性进行研究。首先设计模块动态测试实验,实时监测退化数据,同时应用瞬态双界面法间隔性地测量热阻的退化情况。根据实验结果,从失效机理方面分析退化条件和各层材料的退化情况之间的关系。同时以有限元分析方法作为辅助手段,验证了实验测量的有效性,且更加直观地得到在不同边界条件下IGBT的热模型。研究结果表明,温度波动对于模块退化特性的影响要远高于温度和开关频率对模块造成的影响。较高的频率对于模块的影响主要在芯片内部,而温度波动对于模块的影响主要在包装级别。
In this paper,the thermal degradation characteristics of insulated gate bipolar transistor(IGBT)under different operating modes are studied.The module dynamic test experiment is designed to monitor the degradation data in real time,and the degradation of thermal resistance is measured at intervals by the transient double-interface method.Based on the experimental results,the relationship between the aging conditions and the degradation of each layer of materials is analyzed from the aspect of failure mechanism.At the same time,the finite element analysis method is used as an auxiliary method to verify the validity of the experimental measurements,and the IGBT thermal model under different boundary conditions can be obtained more intuitively.The results show that the effect of temperature excursion has a higher impact on module degradation than that of mean temperature and on-off frequency.The effect of higher frequency on the module mainly occurs inside the chip,while the effect of temperature excursion on the module mainly occurs at the packaging level.
作者
刘向向
李志刚
姚芳
Liu Xiangxiang;Li Zhigang;Yao Fang(The State Key Laboratory of Reliability and Intelligentization of Electrical Equipment Cosponsored by the Ministry of Hebei University of Technology,Tianjin 300130,China)
出处
《电工技术学报》
EI
CSCD
北大核心
2019年第S02期509-517,共9页
Transactions of China Electrotechnical Society
基金
国家科技支撑计划(2015BAA09B01)
国家自然科技基金(51377044)
河北省自然科学基金(E2017202284)
河北省教育厅青年基金(QN2017316)资助项目
关键词
瞬态双界面法
结构函数
时间常数谱
退化
Transient dual-interface method
structure function
time-constant spectrum
degradation
