摘要
利用磁控溅射技术在氩氢混合气氛以及纯氩(Ar)气氛中分别制备(FeCo)xGe1-x-H和(FeCo)xGe1-x磁性半导体薄膜。对于2种磁性半导体薄膜,采用X射线衍射仪测量表明,加氢对(FeCo)xGe1-x-H的非晶结构没有影响;红外光谱测量结果显示,与氢钝化Si的悬挂键不同,氢没有钝化Ge的悬挂键;X光电子能谱测量结果表明,(FeCo)0.70Ge0.30-H和(FeCo)0.70Ge0.30薄膜中的(FeCo)与Ge的相对原子比值与样品制备时设定的比值一致,(FeCo)0.70Ge0.30-H薄膜中Fe、Co和Ge元素的能谱峰位置与(FeCo)0.70Ge0.30薄膜中对应元素的能谱峰位置基本一致,原因可能是Fe(Co)原子和H原子之间结合能化学位移很小,XPS仪器分辨率较低,因而未被检测出来。
(FeCo)xGe1-x-H and(FeCo)xGe1-x magnetic semiconductor films are prepared respectively with magnetically-controlled sputtering technology in the mixed atmosphere of argon hydrogen(Ar:H)and pure argon(Ar).To the two magnetic semiconductor films,the measurements by X-ray diffraction meter shows that the addition of hydrogen has no effect on the amorphous structure of(FeCo)xGe1-x-H.The measuring result by the Infra-red spectroscopy show that unlike the dangling bonds of hydrogen-passivated Si,hydrogen does not have the dangling bonds of blunted Ge.The measurement by the X-ray electron energy spectrometry show that the relative atomic ratio of FeCo and Ge in the films of(FeCo)0.70Ge0.30-H and(FeCo)0.70Ge0.30 is the same as the given ratio of sample preparation.The energy spectrum peak position of Fe,Co and Ge elements in(FeCo)0.70Ge0.30-H film is basically the same as that of the corresponding elements in the(FeCo)0.70Ge0.30 film.The cause may be the small binding energy between Fe(Co)and H atoms in chemical shift and the low resolution of XPS instrument.
作者
裴娟
张芹
原所佳
孙振翠
刘栋
PEI Juan;ZHANG Qin;YUAN Suojia;SUN Zhencui;LIU Dong(School of Science,Shandong Jiaotong University,Jinan 250357,China)
出处
《山东交通学院学报》
CAS
2019年第4期78-82,共5页
Journal of Shandong Jiaotong University
基金
山东交通学院博士科研启动基金资助项目
国家青年科学基金项目(11904394)
