摘要
石墨烯基场效应晶体管(GFET)技术是实现基于石墨烯的高频器件、存储器、传感器以及集成电路的基本器件结构,其在半导体电子器件领域具有广泛的应用前景。本文从专利申请的角度对GFET的发展进行了统计分析,介绍了GFET技术的国内外专利申请情况、主要技术分布和重要申请人分布,并对GFET的研究现状进行了梳理。
Graphene based field effect transistor(GFET)is the basic device structure of high frequency devices,memories,sensors and integrated circuits which based on graphene.It has a wide application prospect in the field of semiconductor electronic devices.This paper makes a statistical analysis of the development of GFET from the perspective of patent application,introduces the domestic and foreign patent application,tech⁃nology distribution and important applicant distribution of GFET technology,and untangles the research status of GFET.
作者
朱丹丹
张燕楠
王建霞
孙健
ZHU Dandan;ZHANG Yannan;WANG Jianxia;SUN Jian(Patent Examination Cooperation Henan Center of the Patent Office,CNIPA,Zhengzhou Henan 450018)
出处
《河南科技》
2019年第36期60-64,共5页
Henan Science and Technology
