摘要
采用搅拌混合法和无压烧结工艺,制备了Mg2+浓度为500 ppm的MgO掺杂和MgF2掺杂的Al2O3陶瓷,系统地研究了MgO和MgF2掺杂对Al2O3陶瓷致密化、显微结构和微波介电性能的影响。研究结果表明:与MgO掺杂相比,MgF2掺杂在较高温度下能更加有效地促进Al2O3陶瓷的致密化。在1550℃烧结条件下,MgF2掺杂的Al2O3陶瓷比MgO掺杂的Al2O3陶瓷的晶粒更大,同时介电常数也更高。但另一方面,MgF2掺杂的Al2O3陶瓷介电损耗也远比MgO掺杂的Al2O3陶瓷要高。同时简单分析了造成此现象的原因。
Al2O3 ceramics doped with MgO and MgF2( Mg2+ doping content was 500 ppm) were prepared by agitation mixing method and pressureless sintering process. The effects of MgO and MgF2 doping on the densification,microstructure and microwave dielectric properties of Al2O3 ceramics were systematically investigated. The results show that MgF2 doping can promote the densification of Al2O3 ceramics more effectively than MgO doping at higher temperatures. The grain size and dielectric constant of MgF2-doped Al2O3 ceramics are larger than those of MgO-doped Al2O3 ceramics sintered at1550 ℃ . On the other hand,the dielectric loss of MgF2-doped Al2O3 ceramics is much higher than that of Mg O-doped Al2O3 ceramics. The reasons for this phenomenon are briefly analysed.
作者
林聪毅
袁璐
李蔚
LIN Cong-yi;YUAN Lu;LI Wei(School of Materials Science and Engineering,East China University of Science and Technology,Shanghai 200237,China;Shanghai Sansi Electronics Engineering Co.,Ltd.,Shanghai 201199,China)
出处
《硅酸盐通报》
CAS
北大核心
2019年第12期3845-3848,共4页
Bulletin of the Chinese Ceramic Society
