期刊文献+

一种新型的分段曲率补偿带隙基准源设计 被引量:11

Design of a novel piecewise curvature compensated bandgap reference
下载PDF
导出
摘要 针对传统的带隙基准源曲率补偿效果较差的问题,采用两路跨导放大器设计了一种新型的分段曲率补偿的带隙基准源。其中一路跨导放大器比较三极管的发射极-基极电压VEB和一个粗略的基准电压,在低温段产生随温度升高近似成指数减小的电流;另一路跨导放大器比较VEB和另一个粗略的基准电压,在高温段产生随温度升高近似成指数增大的电流,对传统的电流型带隙基准源进行精确的分段曲率补偿。基于TSMC 0. 18μm CMOS工艺,对电路进行设计和仿真。仿真结果表明,3. 3 V电源电压时,在-40^+150℃温度范围内,温度系数为1. 84×10^-6/℃,低频时的电源抑制比为-98. 3 d B,线性调整率为0. 0047%。 Aiming at the problem of poor curvature compensation for traditional bandgap reference,a bandgap reference with novel piecewise curvature compensation was designed based on two transconductance amplifiers. One transconductance amplifier compared the emitter-base voltage VEB of the triode with a coarse reference voltage,which generated a current that decreased exponentially with increasing temperature in the low temperature range approximately. The other transconductance amplifier compared the voltage VEB with another coarse reference voltage,producing an approximately exponentially increasing current with increasing temperature in the high temperature range. These two currents were used to provide precise piecewise curvature compensation for the conventional current-type bandgap reference. The circuit was designed and simulated in TSMC 0. 18 μm CMOS process. The simulation results show that the temperature coefficient is 1. 84×10-6/℃ in the temperature range of-40-+150 ℃ at 3. 3 V power supply voltage,the power supply rejection ratio( PSRR) is-98. 3 dB at low frequency,and the linear adjustment rate is 0. 0047%.
作者 孙帆 黄海波 卢军 陈宇峰 SUN Fan;HUANG Haibo;LU Jun;CHEN Yufeng(School of Electrical&Information Engineering,Hubei University of Automotive Technology,Shiyan 442002,Hubei Province,China)
出处 《电子元件与材料》 CAS CSCD 北大核心 2020年第1期80-85,共6页 Electronic Components And Materials
基金 湖北省中央引导地方科技发展专项(2018ZYYD007)
关键词 带隙基准源 曲率补偿 跨导放大器 亚阈值 温度系数 电源抑制比 bandgap reference curvature compensation transconductance amplifiers sub-threshold temperature coefficient power supply rejection ratio
  • 相关文献

参考文献9

二级参考文献78

  • 1RAZAVIB.模拟CMOS集成电路设计[M].两安:西安交通大学出版社,2003:384-390.
  • 2高榕.高精度BiCMOS基准源温度补偿策略及电路实现[D].西安:西安电子科技大学,2011.17-22.
  • 3MORAGAR.集成电路设计:从二极管到高阶带隙基准源[M].黄晓宗.译.北京:科学出版社,2013.35-37.
  • 4徐伟.带曲率补偿的带隙基准及过温保护电路研宄与设汁[D].成都:西南交通大学,2009.
  • 5Behzad R. Design of analog CMOS integrated circuit [M]. Xiam Xian Jiaotong University Press, 2003.
  • 6Ken U, Tetsuya H, Tesuya A, et al. A 300 nW, 15 ppm/℃ 20 ppm/V CMOS voltage reference circuit consisting of subthreshold MOSFETs [J] IEEE J Sol Sta Circ, 2009(12): 2047-2054.
  • 7Yuji O,Tetsuya H, Nobutaka K et al. 1.2-V Supply, 100-nW, 1. 09-V Bandgap and 0. 7-V Supply, 52. 5- nW, 0. 55-V subbandgap reference circuits for nano- watt CMOS LSIs [J] IEEE J Sol Sta Circ, 2013 (7) ~ 1-9.
  • 8Bowman K A, Duvall S G, Meindl J D. Impact of die- to-die andwithin-die parameter fluctuations on themax- imum clock frequency distribution for gigascale inte- gration[J]IEEE J Sol Sta Cir, 2002(6) : 183-190.
  • 9Xing Xin-peng, Wang Zhi-hua, Li Dong-mei. A low voltage highprecision CMOS bandgap reference [C]// Norehip Conference. Boston: IEEE, 2007: 1-4.
  • 10Ivanov V, Brederlow R, Gerber J. An ultra low power bandgap operational at supply from 0. 75 V[J] IEEE J Sol Sta Cir, 2012(7) : 1515-1523.

共引文献47

同被引文献63

引证文献11

二级引证文献14

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部