摘要
目的本文旨在对硅微电容式声压传感器进行电离辐射效应研究,获得传感器在γ射线照射下的辐射损伤效果。方法在分析γ射线与材料辐射作用机理上,设计辐射实验,研究硅微电容式声压传感器以及P型和N型两种结型场效应管的辐射效应,研究硅微电容式声压传感器输出信号波形随辐射总剂量的变化关系,对比两类结型场效应管直流参数受辐射总剂量影响的规律。结果硅微电容声压传感器在辐照初始时刻,输出信号幅值增益急剧增大,且正半段幅值出现线性失真;累积辐照1.5 kGy后输出信号增益显著下降,线性失真恢复。两类JFET辐照累积剂量达到432 kGy后,N沟道JFET的漏电流IDC及跨导gm略有下降,P沟道JFET直流参数无明显变化。结论 JFET具有较好的耐辐照性能,其中γ射线照射对P沟道的影响小于N沟道。γ射线对硅微电容式传感器的辐照效应主要体现在电离辐射对其内部集成的N沟道MOS器件的辐射损伤。本文所研究内容为核辐射环境中传感器的选型和应用提供技术支持和数据支撑。
Objective By analyzing the waveform of the output signal of Si-Sonic Microphone and the variation of JFET DC parameters under γ-ray irradiation conditions, the radiation damage effect of the sensor is obtained and methods to improve the radiation resistance are proposed.Methods From the perspective of the ionizing radiation damage effect caused by γ-rays, the Si-Sonic Microphone and the JFET irradiation experiments under 60Co γ-ray were designed.Results Output signal of Microphone increases rapidly with a linear distortion generated at the positive parts of the amplitude after several minute of irradiation;output signal reduces significantly after one hour irradiation;the single amplitude continuously decreases with the cell voltage reduction. The source drain current and transconductance of N channel JFET decline slightly and no significant change of P channel JFET DC parameters is shown after 432 kGy irradiation.Conclusion JFET has good irradiation resistance, and P channel JFET is better than N channel JFET. The irradiance effect of γ-ray on Si-Sonic Microphone is mainly reflected in the radiation damage of ionizing radiation to its integrated N channel MOS devices. Three methods for enhancing the γ-ray irradiation resistance of the Si-Sonic Microphone are proposed by the experimental data.
作者
曲延涛
全洪涛
韩永超
QU Yantao;QUAN Hongtao;HAN Yongchao(Department of Radiation Safety,China Institute of Atomic Energy,Beijing 102413 China;University of Electronic Science and Technology of China)
出处
《中国辐射卫生》
2019年第5期508-512,共5页
Chinese Journal of Radiological Health
