摘要
为了改善半导体激光器的散热性能,在C-mount封装的基础上添加了高热导率碳化硅(silicon carbide,SiC)材料作为过渡热沉。通过有限元分析的方式获得最优SiC结构参数:厚度为0.4 mm,高度为1.9 mm,宽度为6.35 mm。选取波长为808 nm、功率为10 W、腔长为1.5 mm的芯片并对其进行封装,对设计结果进行理论热模拟及实验测试。通过实验测试验证了仿真模拟结果,实验结果为:激光器热阻、输出功率、电光转换效率分别为4.08℃/W、17.8 W、61.5%。验证了SiC结构参数设计的可行性,相比传统激光器热而言,本文设计方案使半导体激光器的热阻降低了0.49℃/W、功率与电光转化效率提高了10%。
In order to improve heat dissipation performance of semiconductor laser, high thermal conductivity silicon carbide(SiC) material is added as transitional heat sink on the basis of C-mount package. By means of finite element analysis, the optimal SiC structural parameters were obtained: the thickness 0.4 mm, the height 1.9 mm, and the width 6.35 mm. The chip was packaged with wavelength 808 nm, power 10 W and cavity length 1.5 mm. Theoretical thermal simulation and experimental test were carried out on the design results. The simulation results are verified by experimental tests. The experimental results show that the laser thermal resistance, output power and electro-optic conversion efficiency are 4.08 ℃/W, 17.8 W and 61.5% respectively. The feasibility of SiC structural parameter design is also verified. Compared to conventional lasers, the design scheme in this work reduces the thermal resistance of semiconductor laser by 0.49 ℃/W, and increases the power and electro-optical conversion efficiency by 10%.
作者
吴胤禛
柳祎
高全宝
冯源
晏长岭
李洋
刘国军
WU Yinzhen;LIU Yi;GAO Quanbao;FENG Yuan;YAN Changling;LI Yang;LIU Guojun(State Key Laboratory of High Power Semiconductor Laser,Changchun University of Science and Technology,Changchun 130022,China)
出处
《中国科技论文》
CAS
北大核心
2019年第12期1362-1368,共7页
China Sciencepaper
基金
装备预研基金重点项目(61404140103)
吉林省科技厅资助项目(20160101254JC)
关键词
激光器
碳化硅
热阻
结温
热沉
lasers
silicon carbide(SiC)
thermal resistance
junction temperature
heat sink
