摘要
利用吸收、光电流和光致发光等光谱表征并结合理论报道,分析了缺陷态丰富的铜锌锡硫半导体材料的光学带隙、带尾态和深浅杂质能级,揭示了Sn_(Zn)相关的缺陷态是影响铜锌锡硫带边电子结构的关键因素,其中高浓度的中性缺陷簇[2Cu_(Zn)+Sn_(Zn)]能导致带隙明显窄化,而离子性缺陷簇[Cu_(Zn)+Sn_(Zn)]是主要的深施主缺陷态,同时存在的大量带尾态引起带边相关的光致发光峰明显红移。贫铜富锌条件下,适当减少锡含量,可有效抑制与Sn_(Zn)相关的缺陷簇,并避免带隙的窄化。
The bandedge electronic structure including the optical bandgap,band-tail states,and deep/shallow donor and acceptor levels in Cu2ZnSnS4 semiconductor was analyzed by absorption,photocurrent and photoluminescence spectroscopy,and the theoretical reports.It is revealed that the SnZn-related defect in Cu2ZnSnS4 with abundant defect states is one of the key factors affecting the band-edge electronic structure.High concentration of the neutral defect cluster[2CuZn+SnZn]can narrow the band gap substantially,while the partially-passivated(ionic)defect cluster[CuZn+SnZn]is the main deep donor defect.A large number of band-tail states are responsible for the obvious red-shift of the bandedge-related photoluminescence transition energy.These detrimental defects related to SnZn can be effectively suppressed by properly reducing the Sn content in the copper-poor and zincrich growth condition,which also avoids the narrowing of the optical bandgap of the Cu2ZnSnS4 absorption layer.
作者
马骕驭
马传贺
卢小双
李国帅
孙琳
陈晔
越方禹
褚君浩
MA Su-Yu;MA Chuan-He;LU Xiao-Shuang;LI Guo-Shuai;SUN Lin;CHEN Ye;YUE Fang-Yu;CHU Jun-Hao(Key Laboratory of Polar Materials and Devices,School of Physics and Electronic Science,East China Normal University,Shanghai 200241,China;National Laboratory for Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China)
出处
《红外与毫米波学报》
SCIE
EI
CAS
CSCD
北大核心
2020年第1期92-98,共7页
Journal of Infrared and Millimeter Waves
基金
国家自然科学基金(61790583,61874043,61874045,61574057
61574059)
航空科学基金(201824X8001)
国家重点研发计划(2016YFB0501604)~~
关键词
禁带宽度
半导体缺陷
光谱表征
铜锌锡硫
bandgap
semiconductor defects
spectroscopy characterization
Cu2ZnSnS4
