摘要
采用直流反应磁控溅射制备出的氧化铝质子导体作为栅介质,采用射频磁控溅射制备的铟镓锌氧(IGZO)和铟锌氧(IZO)分别作为沟道和源漏电极,得到了由溅射方法制备的氧化物双电层薄膜晶体管(TFT)。对氧化铝栅介质的基本性质进行了表征,论证了氧化铝栅介质厚度与漏电流之间的关系,得出随着栅介质厚度的增加,电场强度下降,离子漏电流也有所下降的结论;并对双电层TFT进行了特性曲线测试,在栅压为-1~2 V时获得的开关比为3.6×10^4,迁移率为15.5 cm2·V^-1·s^-1。最后通过改变测试环境的相对湿度,测试了双电层TFT的湿度稳定性,发现其转移特性曲线中的源漏电流随着湿度的下降总体上呈现下降趋势,并分析论证了该类器件性能参数受湿度影响的机理。
Oxide based electric double-layer thin film transistors(TFTs)were fabricated using the sputtering technique with the alumina proton conductor deposited by DC-reactive sputtering as the gate dielectric,and the indium gallium zinc oxide(IGZO)and indium zinc oxide(IZO)fabricated by RF magnetron sputtering as the semiconductor channel and conductive electrodes,respectively.Basic properties of the alumina dielectric were characterized,and the relationship between the alumina dielectric thickness and the leakage current density was demonstrated.It is concluded that with the increase of the gate dielectric thickness,the electric field strength and the ion leakage current decreases,respectively.Characteristic curve measurements of the electric double-layer TFTs were carried out.The results show that the on/off ratio is 3.6×10^4 and the mobility is 15.5 cm^2·V^-1·s^-1 in the gate voltage range of-1-2 V.Finally,the humidity stability of the electric double-layer TFT was tested by changing the relative humidity of the testing environment.It is found that the source-drain current in transfer characteristic curves decreases with the decreasing of humidity.The corresponding mechanism of the humidity impacts on this type of device was analyzed.
作者
魏力
王鑫池
牟鹏霖
邵枫
顾晓峰
Wei Li;Wang Xinchi;Mu Penglin;Shao Feng;Gu Xiaofeng(School of Internet of Things Engineering,Jiangnan University,Wuxi 214000,China)
出处
《半导体技术》
CAS
北大核心
2020年第1期37-42,83,共7页
Semiconductor Technology
关键词
氧化铝
双电层
薄膜晶体管(TFT)
磁控溅射
湿度
alumina
electric double-layer
thin film transistor(TFT)
magnetron sputtering
humidity
