摘要
利用CFBR-Ⅱ快中子反应堆(中国第二座快中子脉冲堆)和60Co装置开展不同顺序的中子/γ辐照双极晶体管的实验。在集电极-发射极电压恒定条件下,测量了双极晶体管电流增益随集电极电流的变化曲线,研究不同顺序中子/γ辐照对双极晶体管电流增益的影响。分析实验结果发现,集电极-发射极电压一定时,集电极电流极低情况下电流增益退化比较大,随集电极电流增加电流增益逐渐减小;就实验选中的两类晶体管而言,先中子后γ辐照造成双极晶体管电流增益的退化程度大于先γ后中子辐照,而且PNP型晶体管比NPN型晶体管差异更明显。本文进行了双极晶体管电离/位移协同辐照效应相关机理的初步探讨。
In this paper, CFBR-II fast neutron reactor(China’s second fast neutron pulse reactor) and Co-60 device are used to carry out experiments on different sequential neutrons/gamma irradiated bipolar transistors. Under the condition that the collector-emitter voltage is constant, the variation curve of the bipolar transistor current gain with the collector current is measured, and the influence of different irradiation order of neutron/gamma on the current gain of the bipolar transistor is studied. The experimental results show that when the collector-emitter voltage is constant and the collector current is extremely low, the current gain degradation of the bipolar transistor is relatively large, and the current gain increases with the collector current. The degradation of the current gain of the bipolar transistor caused by the gamma irradiation after the neutron pre-irradiation would be greater than that of the neutron irradiation after the gamma pre-irradiation, and the difference is more obvious in PNP transistor than in NPN transistor. This paper presents a preliminary discussion on the related mechanism.
作者
王凯
吕学阳
吴锟霖
冯加明
范晓强
李俊杰
杨桂霞
鲁艺
邱东
邹德慧
Wang Kai;LüXueyang;Wu Kunlin;Feng Jiaming;Fan Xiaoqiang;Li Junjie;Yang Guixia;Lu Yi;Qiu Dong;Zou Dehui(Institute of Nuclear Physics and Chemistry,CAEP,Mianyang 621900,China)
出处
《强激光与粒子束》
EI
CAS
CSCD
北大核心
2020年第4期104-109,共6页
High Power Laser and Particle Beams
基金
国家自然科学基金项目(11605169)
关键词
双极晶体管
中子
γ射线
电流增益
集电极电流
bipolar junction transistors
neutrons
gamma
current gain
collector current
