摘要
通过溶胶-凝胶法在SiC基底上制备了钇掺杂硅酸锆薄膜。采用X射线衍射(XRD)和扫描电子显微镜(SEM)分析技术分别对样品的物相和形貌进行了表征,并测试了抗氧化性能。实验结果表明,未进行钇掺杂时,硅酸锆薄膜中存在t-ZrO2和m-ZrO2杂质相,1300℃氧化102 h后SiC基底增重0.03%。相比之下,钇掺杂后硅酸锆薄膜中仅存在t-ZrO2杂质相,当钇掺杂量为2%时,氧化后SiC基底的质量变化仅为0.027%。这是由于钇掺杂防止了ZrO2相转变,提升了薄膜的整体稳定性,但掺杂量大于3%时会影响硅酸锆的合成。
Yttrium doped zircon film was prepared by sol-gel method on the SiC substrate.X-ray diffraction(XRD)and scanning electron microscope(SEM)were employed to characterize the phase composition and morphology of the zircon film,and the antioxidation properties of the film were also investigated.The experiment results indicated that the t-ZrO2 and m-ZrO2 impurities existed in the film before yttrium doping.An increase about 0.03%of undoping zircon film was observed after oxidation at 1300℃ in air for 102 h.After yttrium doping,only t-ZrO2 impurity was detected in the film.In contrast with the undoping sample,the SiC substrate coated by 2% yttrium doped zircon film only gained weight of 0.027%.The excellent protective ability of the film is attributed to the fact that the yttrium doping can restrain the phase transformation of the ZrO2,and thus improve the film stability.However,the large doping content over 3% prevented the pure zircon formation.
作者
陈婷
查剑锐
谢志翔
江伟辉
张筱君
江莞
CHEN Ting;ZHA Jianrui;XIE Zhixiang;JIANG Weihui;ZHANG Xiaojun;JIANG Wan(Jingdezhen Ceramic Institute,Jingdezhen 333001,China;National Engineering Research Center for Domestic&Building Ceramics,Jingdezhen 333001,China)
出处
《中国陶瓷》
CAS
CSCD
北大核心
2020年第3期21-26,共6页
China Ceramics
基金
国家自然科学基金项目(51402135,51432004,51774096)
江西省杰出青年人才资助计划(20171BCB23071)
江西省自然科学基金(20181BAB216009,20171BAB216008)
江西省教育厅基金项目(GJJ180708,GJJ180707)。
