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IGBT功率模块热网络模型建立及其参数辨识方法综述和展望 被引量:12

Review and prospect of IGBT power module thermal network model establishment and parameter extraction method
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摘要 绝缘栅双极型晶体管(IGBT)作为功率变流器的核心器件,其可靠性受到广泛重视。而结温过高或者温度波动过高是导致功率器件失效的主要因素,故实时精确地监测IGBT模块结温对于提高其可靠性具有重要意义。通过建立热网络模型,然后对其电路进行仿真可获取结温,该方法因简单易行且可实现对结温的在线监测从而得到广泛应用。对现有的热网络模型进行了总结和归纳,并根据模型结构将其分为一维、二维和三维三类。然后,对近年来热网络模型的参数辨识方法的研究情况进行探讨,并对各个方法进行了比较和评价。在此基础上,对未来新的热网络模型和模型参数辨识方法的研究方向进行了展望。 As the core component of power converter,the reliability of insulated gate bipolar transistor(IGBT)is widely concerned.High junction temperature or high temperature fluctuation are the main factors leading to the failure of power devices.Therefore,accurate monitoring of IGBT module junction temperature in real time is of great significance to improve its reliability.The junction temperature is obtained by building a thermal network model and simulating its circuit.This method is widely used because of its simplicity and feasibility and the realization of on-line monitoring of junction temperature.In this paper,the existing thermal network models are summarized.According to the model structure,they are divided into three categories:one-dimensional,two-dimensional and three-dimensional.Then,the research situation of parameter identification methods for thermal network model in recent years is discussed,and each method is compared and evaluated.On this basis,the future research directions of new thermal network models and model parameter identification methods are prospected.
作者 李凯伟 何怡刚 李兵朋 张胜 Li Kaiwei;He Yigang;Li Bing;Peng Zhangsheng(School of Electrical Engineering and Automation,Hefei University of Technology,Hefei 230009,China)
出处 《电子测量与仪器学报》 CSCD 北大核心 2020年第1期51-60,共10页 Journal of Electronic Measurement and Instrumentation
基金 国家自然科学基金(51977153,51577046) 国家自然科学基金重点项目(51637004) 国家重点研发计划“重大科学仪器设备开发”项目(2016YFF0102200) 装备预先研究重点项目(41402040301)资助。
关键词 IGBT模块 结温提取 热网络模型 参数辨识 IGBT modules junction temperature extraction thermal network model parameter identification
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  • 1乔尔敏,温旭辉,郭新.基于IGBT并联技术的大功率智能模块研制[J].电工技术学报,2006,21(10):90-93. 被引量:13
  • 2梅杨,孙凯,黄立培.基于逆阻式IGBT的三相/单相矩阵式变换器[J].电工技术学报,2007,22(3):91-95. 被引量:15
  • 3Chow T P, Baliga B J, et. al. A self-aligned short process for IGBT[J]. IEEE Transactions on ED, 1992(6): 1317-1320.
  • 4Pirondi A, Nicoletto G, Cova P, et al. Thermo- mechanical finite clement analysis in press-packed IGBT design[J]. Microelectronics Reliability, 2000(40): 1163-1172.
  • 5Yun Chansu, Malberti Paolo, Ciappa Mauro, et al. Thermal component model for electrothermal analysis of IGBT module systems[J]. IEEE Transactions on Advanced Packaging, 2001, 24(3): 401-406.
  • 6Shammas N Y A. Present problems of power module packaging technology[J]. Microelectronics Reliabilty, 2003(43): 519-527.
  • 7ANSYS Release 8.0 Documentation.
  • 8Sauveplane J B, Tounsi P, Scheid E, et al. 3D electro-thermal investigations for reliability of ultra low on state resistance power mosfet[J]. Microelec- tronics Reliability, 2008(48): 1464-1467.
  • 9Koji Sasski, Naoko Iwasa. Thermal and structural simulation techniques for estimating fatigue life of anIGBT module[C]. Proceedings of the 20thinternational symposium on power semiconductor devices and IC's, Oralando, FL, 2008: 181-184.
  • 10Wu W, Held M, Jacob P, et al. Investigation on the long term reliability of power IGBT module[C].Proceedings of 1995 international symposium on power semiconductor devices and IC's, Yokohama:IEEE, 1995: 443-448.

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