摘要
利用射频磁控溅射法结合退火工艺制备了多层结构的MoS2薄膜。优化溅射功率和工作气压条件,在溅射功率为30 W、工作气压为1.0 Pa条件下制备了致密度良好的MoS2薄膜,X射线衍射测量结果表明这种原生的薄膜是非晶态的。对原生的MoS2薄膜在高纯氮气氛围下进行不同温度条件的退火,X射线衍射和拉曼散射测量结果表明,退火温度达到550℃时,MoS2薄膜开始结晶化;温度为650℃时,出现MoS2晶粒;当退火温度达到800~950℃时,薄膜转变成连续的多层MoS2薄膜,多层膜的X射线衍射峰半高宽为0.384°。这一结果表明,射频磁控溅射法结合热退火是一种制备多层MoS2薄膜的简单易行的方法。
The MoS2 film with multilayer structure was prepared by RF magnetron sputtering method and annealing process. The sputtering power and working pressure conditions were optimized. MoS2 film with good compactness was prepared under the conditions of a sputtering power of 30 W and a working pressure of 1.0 Pa. X-ray diffraction measurement results show that this as-grown film is amorphous. The as-grown MoS2 film was annealed in a high-purity nitrogen atmosphere at different temperatures. X-ray diffraction and Raman scattering measurement results show that the MoS2 film begins to crystallize when the annealing temperature reaches 550 ℃, and MoS2 grains appear at 650 ℃. When the annealing temperature reaches 800-950 ℃, the film is transformed into a continuous multilayer MoS2 film, and the X-ray diffraction peak full width at half maximum of the multilayer film is 0.384°. This result indicates that RF magnetron sputtering combined with thermal annealing is a simple and feasible method for preparing multilayer MoS2 films.
作者
滕世豹
杨瑞霞
兰飞飞
陈春梅
田树盛
孙小婷
刘海萍
Teng Shibao;Yang Ruixia;Lan Feifei;Chen Chunmei;Tian Shusheng;Sun Xiaoting;Liu Haiping(School of Electronic and Information Engineering,Hebei University of Technology,Tianjin 300401,China)
出处
《半导体技术》
CAS
北大核心
2020年第4期280-286,311,共8页
Semiconductor Technology
基金
国家自然科学基金资助项目(61774054)。
关键词
MoS2
射频磁控溅射
退火温度
多层薄膜
溅射功率
工作气压
MoS2
RF magnetron sputtering
annealing temperature
multilayer film
sputtering power
working pressure
