摘要
The study presents an investigation into the proton-induced current transient in a silicon-germanium heterojunction bipolar transistor(SiGe HBT).The temporal information of the proton-induced current transients is first measured and then compared with results from heavy ion microbeam experiment.Additionally,a model for proton-induced charge collection based on Geant4 Monte Carlo simulation tools is constructed by using the information from heavy ion experiment and 3D TCAD simulation.The results obtained by the validated model exhibit good consistency with the proton experiment.
基金
supported by the National Natural Science Foundation of China(Grant Nos.11775167,61574171 and 11575138)。
