摘要
We report intrinsic photoconductivity studies on one of the least examined layered compounds,ZrS2.Few-atomic layer ZrS2 field-effect transistors were fabricated on the Si/SiO2 substrate and photoconductivity measurements were performed using both two-and four-terminal configurations under the illumination of 532 nm laser source.We measured photocurrent as a function of the incident optical power at several source-drain(bias)voltages.We observe a significantly large photoconductivity when measured in the multiterminal(four-terminal)configuration compared to that in the two-terminal configuration.For an incident optical power of 90 nW,the estimated photosensitivity and the external quantum efficiency(EQE)measured in two-terminal configuration are 0.5 A/W and 120%,respectively,under a bias voltage of 650 mV.Under the same conditions,the four-terminal measurements result in much higher values for both the photoresponsivity(R)and EQE to 6 A/W and 1400%,respectively.This significant improvement in photoresponsivity and EQE in the four-terminal configuration may have been influenced by the reduction of contact resistance at the metal-semiconductor interface,which greatly impacts the carrier mobility of low conducting materials.This suggests that photoconductivity measurements performed through the two-terminal configuration in previous studies on ZrS2 and other 2D materials have severely underestimated the true intrinsic properties of transition metal dichalcogenides and their remarkable potential for optoelectronic applications.
基金
N.R.P.acknowledged NSF-PREM through NSFDMR-1826886,HBCU-UP Excellence in research NSFDMR-1900692
A portion of this work was performed at the National High Magnetic Field Laboratory,which is supported by the National Science Foundation Cooperative Agreement No.DMR-1644779
the State of Florida.This work was performed,in part,at the Center for Nanoscale Materials,a U.S.Department of Energy Office of Science User Facility
supported by the U.S.Department of Energy,Office of Science,under Contract No.DE-AC02-06CH11357.
