摘要
Black phosphorous(BP),an excellent two-dimensional(2D)monoelemental layered p-type semiconductor material with high carrier mobility and thickness-dependent tunable direct bandgap structure,has been widely applied in various devices.As the essential building blocks for modern electronic and optoelectronic devices,high quality PN junctions based on semiconductors have attracted widespread attention.Herein,we report a junction field-effect transistor(JFET)by integrating narrow-gap p-type BP and ultra-wide gap n-typeβ-Ga2O3 nanoflakes for the first time.BP andβ-Ga2O3 form a vertical van der Waals(vdW)heterostructure by mechanically exfoliated method.The BP/β-Ga2O3 vdW heterostructure exhibits remarkable PN diode rectifying characteristics with a high rectifying ratio about 107 and a low reverse current around pA.More interestingly,by using the BP as the gate andβ-Ga2O3 as the channel,the BP/β-Ga2O3 JFET devices demonstrate excellent n-channel JFET characteristics with the on/off ratio as high as 107,gate leakage current around as low as pA,maximum transconductance(gm)up to 25.3μS and saturation drain current(IDSS)of 16.5μA/μm.Moreover,it has a pinch-off voltage of–20 V and a minimum subthreshold swing of 260 mV/dec.These excellent n-channel JFET characteristics will expand the application of BP in future nanoelectronic devices.
基金
supported by the National Natural Science Foundation of China(Grant No.61922082,61875223,61927813)
the Natural Science Foundation of Jiangsu Province(Grant No.BK20191195)
The support from the Vacuum Interconnected Nanotech Workstation(Nano-X)of Suzhou Institute of Nano-tech and Nano-bionics(SINANO),Chinese Academy of Sciences。
