摘要
与传统的硅基器件相比,碳化硅绝缘栅双极型晶体管(SiC IGBT)具有更小的导通电阻、更高的耐受电压以及更快的开关速度。由于这些优异的特性,SiC IGBT在电力行业有较大的市场需求。基于一款自主研发的15 kV SiC IGBT芯片,测量了芯片的静态特性,搭建了芯片的动态特性测试平台,测量了常温下该15 kV SiC IGBT芯片在2000~9000 V下的动态特性参数,包括开关时间和开关损耗,分析了芯片开关特性参数与外接高压直流源电压的关系,为该型号IGBT芯片性能的进一步改进、优化提供了实验支撑。
Compared with conventional silicon-based devices,silicon carbide insulated gate bipolar transistors(SiC IGBTs)have smaller on-resistance,higher withstand voltage,and faster switching speed.Due to these excellent characteristics,the market demand for SiC IGBTs in the electric power industry is great.Based on a self-developed 15 kV SiC IGBT chip,the static characteristics of the chip were mea-sured.A test platform for the dynamic characteristics of the chip was built,and the dynamic characteristic parameters of the self-developed 15 kV SiC IGBT chip at 2000-9000 V were measured at room temperature,including switching time and switching loss.The relationship between switching characteristic parameters of the chip and external high voltage DC source voltage was analyzed to provide an experimental support for the further improvement and optimization for the performance of this type of IGBT chip.
作者
杜泽晨
吴沛飞
任志军
杨晓磊
张一杰
赵志斌
柏松
杨霏
Du Zechen;Wu Peifei;Ren Zhijun;Yang Xiaolei;Zhang Yijie;Zhao Zhibin;Bai Song;Yang Fei(State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources(North China Electric Power University),Beijing 102206,China;State Key Laboratory of Advanced Power Transmission Technology(Global Energy Interconnection Research Institute Co.,Ltd.),Beijing 102209,China;Ponovo Power Co.,Ltd.,Beijing 100080,China;The 55th Research Institute,CETC,Nanjing 210016,China)
出处
《半导体技术》
CAS
北大核心
2020年第9期723-729,共7页
Semiconductor Technology
基金
国家重点研发计划资助项目(2018YFB0905700)
国家电网公司总部科技项目(5455GB170004)。
