摘要
由于高开关速度和低通态电阻,碳化硅(SiC)金属氧化物半导体场效应晶体管(MOSFET)的开关过程易受杂散参数的影响,表现出较强的过电流、过电压和电流电压振荡,影响SiC MOSFET的高效、高质、安全应用和潜能充分利用。半桥电路为逆变器、PWM整流器、多电平变流器等众多电力电子电路的组成单元。该文以SiC MOSFET半桥电路为研究对象,结合实测波形,详细分析了SiC MOSFET半桥电路的开关瞬态过程和换流回路,推导出综合考虑电路主要寄生参数、器件寄生结电容非线性特性和跨导系数非线性的瞬态电流和电压的解析计算式,定量分析了驱动回路参数和功率回路参数(包括杂散参数)等多影响因素对SiC MOSFET半桥电路瞬态电流、电压冲击值的影响及影响规律。通过大量仿真和实验验证了理论分析的正确性。
Due to high switching speed and low on-resistance,the switching transient process of SiC MOSFETs is susceptible to the influences of circuit-level stray parameters and exhibits significant overvoltage,overcurrent and switching rings,which degrades the high-efficiency,high-quality and safe application and potential utilization of SiC MOSFETs.Half-bridge circuit is the fundamental modular for PWM rectifiers,inverters,multi-level converters and so on.Taking half-bridge configuration for example,the switching transient behavior of SiC MOSFETs in power electronic circuits is thoroughly examined based on measured results.The analytical model to calculate the transient current and voltage in the SiC MOSFET half-bridge configuration was derived,integrating the influences of the main parasitic parameters of the circuit,the nonlinear characteristics of the device junction capacitances and transconductance.Based on the model,the influences and their influencing rules of gate loop parameters and power loop parameters on current and voltage overshoot peaks were quantitatively explored.Then the sensitivity analysis results was presented.Simulation and experimental results validate the correctness of the derived analytical model and the theoretical analysis.
作者
王莉娜
马浩博
袁恺
刘壮
邱宏程
Wang Lina;Ma Haobo;Yuan Kai;Liu Zhuang;Qiu Hongcheng(School of Automation Science and Electrical Engineering Beihang University,Beijing,100191,China)
出处
《电工技术学报》
EI
CSCD
北大核心
2020年第17期3652-3665,共14页
Transactions of China Electrotechnical Society
基金
国家自然科学基金(51877005)
航空科学基金(ASFC-2019ZC051012)资助项目。
