摘要
探究了非对称抛物受限势对GaAs非对称半指数量子阱中弱耦合极化子性质的影响。采用线性组合算符方式和两次幺正变换,导出了GaAs非对称半指数量子阱中弱耦合极化子的基态能量随x轴、y轴方向的非对称抛物受限势的受限强度ωx、ωy和非对称半指数受限势的两个正参量U0、σ的变化情况。对GaAs半导体进行了数值计算,结果表明非对称半指数量子阱中弱耦合极化子的基态能量E0是参量U0的增函数,而它是另一个参量σ的减函数。非对称抛物受限势的影响表现为基态能量E0随x轴和y轴方向的非对称抛物受限势的受限强度ωx和ωy的增加而迅速增大,表示出量子阱独特的量子尺寸限制效果。
The influence of asymmetric parabolic confinement potential on the properties of the weak-coupling polaron in a GaAs asymmetrical semi-exponential quantum well was studied.Using linear combination operator method and two unitary transformations,the dependence of ground state energy of weak-coupling polaron in GaAs asymmetrical semi-exponential quantum well on the confinement strengths of asymmetrical parabolic potential ωx and ωy of x-axis and y-axis directions and the two positive parameters U0、σ of asymmetric semi-exponential confinement potential is derived.The numerical calculation of GaAs semiconductor shows that the ground state energy of the weak-coupling polaron in GaAs asymmetrical semi-exponential quantum well is an increasing function of the parameter U0,whereas it is a decreasing one of the parameterσ.The influence of asymmetrical parabolic confinement potential is manifested as the rapid increase of ground state energy with the increase of confinement strengths of asymmetrical parabolic potential ωx and ωy of x-axis and y-axis directions.These can be attributed to the quantum size confinement effects.
作者
郑永红
邱伟
肖景林
ZHENG Yonghong;QIU Wei;XIAO Jinglin?(Department of Basic,University of Information Science and Technology of Bejing,Beijing,100101,CHN;Institute of Condensed Matter Physics,Inner Mongolia University for the Nationalities,Tongliao,Inner Mongolia,028043,CHN)
出处
《固体电子学研究与进展》
CAS
北大核心
2020年第4期243-246,279,共5页
Research & Progress of SSE
关键词
非对称半指数量子阱
极化子
线性组合算符
基态能量
非对称抛物受限势
asymmetrical semi-exponential quantum well
polaron
linear combination operator
ground state energy
asymmetrical parabolic confinement potential
