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MgO薄膜次级电子发射材料研究现状与展望 被引量:2

Research Status and Prospect of MgO Thin Films as Secondary Electron Emission Materials
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摘要 次级电子发射是一种涉及带电粒子与固体表面间相互作用的复杂过程.MgO薄膜具有较高的次级电子发射系数和化学稳定性,在多种光电倍增管、交流等离子平板显示器中具有广泛应用.主要介绍次级电子发射的基本原理、MgO薄膜次级电子发射材料的发展演变,并结合本课题组的研究工作,重点介绍具有高次级发射系数的MgO及掺杂MgO次级电子发射材料的研究进展.最后对次级电子发射材料的需求与发展趋势进行展望. Secondary electron emission(SEE)is a complicated process involving interaction between charged particles and solid surface.Due to advantages of high secondary electron yields(δ)and chemical stability,MgO thin films have broad applications in various photomultiplier tubes(PMT)and AC plasma display panels.The fundamental principles of SEE and the development of MgO thin films related SEE materials over the last several decades were reviewed in this paper.Based on literature review and previous research work in our group,the development of MgO and doped MgO thin films with high δ was presented.Finally,requirements and prospects for SEE materials nowadays were summarized.
作者 周帆 王蕊 梁轩铭 刘伟 王金淑 ZHOU Fan;WANG Rui;LIANG Xuanming;LIU Wei;WANG Jinshu(College of Materials Science and Engineering,Beijing University of Technology,Beijing 100124,China)
出处 《北京工业大学学报》 CAS CSCD 北大核心 2020年第10期1128-1138,共11页 Journal of Beijing University of Technology
基金 国家自然科学基金资助项目(51404015) 北京市属高校高水平教师队伍建设支持计划高水平创新团队建设计划资助项目(IDHT20170502)。
关键词 次级电子发射 MgO薄膜 次级发射系数 光电倍增管 掺杂 研究进展 secondary electron emission(SEE) MgO thin films secondary electron yield photomultiplier tubes(PMT) doping research development
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  • 1潘京生.微通道板及其主要特征性能[J].应用光学,2004,25(5):25-29. 被引量:53
  • 2杜维玺,崔东焕,杨振国,曹占义,孙大仁.稀土La在Al-Si共晶合金中的偏聚及其与合金细化变质的关系[J].稀土,1989,10(5):1-4. 被引量:11
  • 3张恩虬 刘学悫.关于钡系统热阴极的电子发射机理[J].电子科学学刊,1984,6(2):89-89.
  • 4Duanmu Q D,Jingquan T,et al.Preparation and Performance of Si microchannel plate[J].SPIE,2001,4601:284-287.
  • 5Laprade B N.Advancement in microchannel plate technology[J].SPIE,1992,1655:150-178.
  • 6Smith A W,Beetz C P,et al.Si microchannel plates for image intensification[J].SPIE,2000,4128:14-22..
  • 7Tremsin A S,Vallerga J V,et al.The latest developments of high gain Si microchannel plates[J].SPIE,2003,4845:215-224..
  • 8Yater Joan E, Shaw Jonathan L, Jensen Kevin L, et al. Emission Characterization of Diamond Current Amplifier [C-]. IEEE,2010.
  • 9Simon R E, Williams B F. Secondary--Electron Emis- sion[C]. IEEE, 1968.
  • 10Ding Ming Q, Li Lili, Feng Jinjun, et al. Investigation of Seeondary Electron Emission from Boron doped Dia- mond Films Grown by MPCVD[C]. IVEC,2012.

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