摘要
精确控制成核点位置是制备高质量二维纳米材料的关键。通过旋涂氧化石墨烯(GO)水溶液,在衬底上分散GO纳米片作为促成核种子层,成功制备了MoS2二维纳米片。MoS2纳米片的拉曼光谱峰位差(A1g-E12g)为19.5 cm^-1,其表面与衬底表面的高度差为0.85 nm,说明所生长的MoS2纳米片为单原子层结构。扫描电镜观察到,成核有两种方式,分别是以GO纳米片成核和GO富集MoS2分子成核。两种方式均有助于水平生长单层的MoS2纳米片。
Precisely controlling the position of nucleation points is the key to preparing high-quality two-dimensional nanomaterials.MoS2two-dimensional nanosheets were successfully prepared by spin-coating graphene oxide(GO)aqueous solution and dispersing GO nanosheets on the substrate as the seed layer for promoting nucleation.The Raman spectrum peak position difference(A1gE12g)of MoS2 nanosheets is 19.5 cm^-1,and the height difference between the surface of MoS2 nanosheet and that of the substrate was 0.85 nm,indicating that the MoS2 nanosheets were single atomic layer structure.It was observed by scanning electron microscope that efficient nucleation can be achieved in two ways,nucleation by GO nanosheet itself and nucleation by MoS2 molecules absorbed on GO nanosheets.Both methods contribute to the horizontal growth of monolayer MoS2 nanosheets.
作者
刘兆肃
郑晓武
徐海涛
LIU Zhaosu;ZHENG Xiaowu;XU Haitao(College of Electronic Engineering,South China Agricultural University,Guangzhou 510642,China)
出处
《东莞理工学院学报》
2020年第5期84-89,共6页
Journal of Dongguan University of Technology
基金
广东大学生科技创新培养项目(pdjh2019b0087)
广东省普通高校特色创新项目(2019KTSCX018)。
关键词
过渡金属硫化物
二维纳米材料
化学气相沉积法
种子层
transitional metal dichalcogenides
two-dimensional nanomaterials
chemical vapor deposition method
seed layer
