摘要
Rare-earth orthoferrite SmFeO3 is an outstanding single-phase multiferroic material,holding great potential in novel low-power electronic devices.Nevertheless,simultaneous magnetic and ferroelectric orders as well as magnetoelectric(ME)coupling effect at room temperature(RT)in this system have not been demonstrated yet.In this study,epitaxial SmFeO3 films were successfully prepared onto tensile-strain Nb-SrTiO3(Nb-STO)substrates by a pulsed laser deposition(PLD)method.Measurement results show that the films exhibit obvious ferromagnetic and ferroelectric orders at RT.Meanwhile,the magnetic anisotropy gradually changes from out-of-plane(OP)to in-plane(IP)direction with increasing film thickness,which is attributed to the variations of O 2p-Fe 3d hybridization intensity and Fe 3d-orbit occupancy caused by the strain-relaxed effect.Moreover,electrically driven reversible magnetic switching further proves that the SmFeO3 films exhibit the RT ME coupling effect,suggesting promising applications in new-generation electric-write magnetic-read data storage devices.
稀土正铁氧体SmFeO3由于在低能耗自旋电子学器件领域的潜在应用,被认为是一种杰出的单相多铁材料.然而,至今尚未证明该体系在室温下兼具磁性、铁电性以及磁电耦合效应.本文使用脉冲激光沉积法在可以提供拉应力的Nb-SrTiO3基片上成功外延了倾斜反铁磁SmFeO3单层薄膜.测量结果显示薄膜具有明显的室温铁磁和铁电序.同时,随着厚度的增加,薄膜的磁各向异性逐渐从面外转移到面内方向,这是由应力释放效应导致的O 2p-Fe 3d杂化强度和Fe-3d轨道占据变化同时引起的.另外,电压驱动可逆磁畴反转进一步证明SmFeO3薄膜具有明显的室温磁电耦合效应.本工作对设计新一代电写磁读数据存储器件具有一定的推动作用.
作者
Jun Zhang
Wuhong Xue
Tiancong Su
Huihui Ji
Zhi Yan
Guowei Zhou
Zhiyong Quan
Xiaohong Xu
张军;薛武红;苏天聪;姬慧慧;严志;周国伟;全志勇;许小红(School of Chemistry and Materials Science of Shanxi Normal University&Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education,Linfen 041004,China;Department of Chemistry&Chemical Engineering,Lvliang University,Lvliang 033001,China;Research Institute of Materials Science of Shanxi Normal University&Collaborative Innovation Center for Shanxi Advanced Permanent Magnetic Materials and Techonology,Linfen 041004,China)
基金
This work was supported by the National Natural Science Foundation of China(51871137,51901118,51571136 and 61904099).The authors acknowledge Shanghai Synchrotron Radiation Facility at the Beamline BL08U1A and the National Synchrotron Radiation Laboratory at the Beamline BL12-a for the XAS measurements.
