摘要
耐电压是Y电容器的一个主要性能指标,而击穿电压则更能考核Y电容器的耐电压特性;采用MINITAB软件DOE全因子设计方案,对Y电容器芯片相关尺寸进行研究分析,找出了对Y电容器BDV影响显著的因子。结果表明,芯片银电极留边量、芯片厚度的影响最为显著,同时,芯片直径*留边量的交互作用对Y电容器BDV影响也是不容忽略的。
Withstand voltage is one of the main performance indicators of Y capacitor,and the BDV can better evaluate its voltage withstand characteristics.By using the DOE full factorial design of MINITAB software,the relevant dimensions of the Y capacitor chip are studied and analyzed,and the factors that have a significant impact on the BDV of the Y capacitor are found.The results show that the influence of chip silver electrode margin and chip thickness is the most significant.At the same time,the interaction influence of chip diameter and margin on the BDV of Y capacitor cannot be ignoned.
作者
冯诗银
王志强
吴金珠
王学宇
王晓露
FENG Shiyin;WANG Zhiqiang;WU Jinzhu;WANG Xueyu;WANG Xiaolu(Guangdong South Hongming Electronic Science and Technology Co.,Ltd.,Dongguan 523216,China;Guangzhou U-Bridge Electronic Technology Co.,Ltd.,Guangzhou 511485,China;Yancon Xinjiang Coal Chemicals Co.,Ltd.,Urumqi 830000,China)
出处
《电子产品可靠性与环境试验》
2020年第5期28-31,共4页
Electronic Product Reliability and Environmental Testing
关键词
Y电容器
击穿电压
试验设计
因子
箱线图
方差分析
Y capacitor
breakdown voltage
design of experiment
factor
box-plot
analysis of variance
