摘要
基于GaAs肖特基二极管,研制了1×4多像素220 GHz线阵列被动接收前端,接收前端的每个接收通道包含一个W波段三倍频器和一个220 GHz分谐波混频器。三倍频器使用两个以串联结构集成4个肖特基结的二极管芯片实现平衡式倍频模式;220 GHz分谐波混频器使用一对反向并联结构的GaAs肖特基二极管实现混频功能。室温下输入功率为100 mW,三倍频器在90~110 GHz频带范围内功率效率超过5%;当本振动率为4 mW时,谐波混频器在200~220 GHz频带内变频损耗小于9 dB。接收前端的单个通道通过上机测试,成像性能良好。该接收前端尺寸为40 mm×38 mm×26 mm,可广泛应用于各种毫米波成像检测系统。
Based on the GaAs Schottky diode, a 1×4 multi-pixel 220 GHz linear array passive receiver front-end was developed, each receiving channel of which contained a W-band tripler and a 220 GHz sub-harmonic mixer. The tripler used two GaAs Schottky diode chips in a balanced configuration, each chip integrated four Schottky junctions in a series configuration. The 220 GHz sub-harmonic mixer used an anti-parallel pair of GaAs Schottky diodes to realize the mixing function. The test results show that power efficiency of the tripler is more than 5% in the frequency range of 90-110 GHz for 100 mW input power at room temperature. In the frequency range of 200-220 GHz, the conversion loss of the mixer is less than 9 dB when the local oscillator power is 4 mW.Each single channel of the receiver front-end demonstrates high performance on imaging when it is used in a testing imaging system. The size of the receiver front-end is 40 mm×38 mm×26 mm, and it can be widely used in various millimeter-wave imaging detection systems.
作者
杨大宝
梁士雄
张立森
赵向阳
吕元杰
冯志红
蔡树军
Yang Dabao;Liang Shixiong;Zhang Lisen;Zhao Xiangyang;LüYuanjie;Feng Zhihong;Cai Shujun(The 13th Research Institute,CETC,Shijiazhuang 050051,China;Science and Technology on ASIC Laboratory,Shijiazhuang 050051,China)
出处
《半导体技术》
CAS
北大核心
2020年第10期748-753,共6页
Semiconductor Technology
基金
国家重点研发计划资助项目(2018YFF0109701)。
