摘要
新一代宽禁带半导体SiC器件相比传统Si器件在耐压、高频、高温等性能方面有很大优势。该文基于SiC MOSFET三相PWM整流器设计了SiC MOSFET的驱动电路;SiC MOSFET在三相PWM整流器的高频化设计,可以使交流侧的输入电感量进一步减小,这有利于提高电源的功率密度,但也容易导致整流器启动时刻出现过流问题。针对这一问题,提出了启动时刻通过合理设计电压电流双环控制中电压环的输出值作为限幅值的方法来抑制启动过流,并通过实验验证了该驱动电路满足设计要求和启动过流抑制方法的有效性。
Compared with traditional Si devices,the new generation wide band gap semiconductor SiC devices have greater advantages in voltage,high frequency,high temperature and other performance.This paperbased on the three-phase PWM rectifier of SiC MOSFET,the driving circuit of SiC MOSFET is designed.The high frequency design of SiC MOSFET in the three-phase PWM rectifier can further reduce the input inductance of the AC side,which is conducive to improving the power density of the power supply,but it will also lead to the over-current problem at the start-up time of the rectifier.In order to solve this problem,the method of limiting the amplitude of the voltage loop in the voltage current double loop control is proposed to restrain the start-up overcurrent,the driving circuit meets the design requirements and the effectiveness of the start-up overcurrent suppression method is verified by experiments.
作者
米保全
李许军
王春霞
MI Baoquan;LI Xujun;WANG Chunxia(Gansu Mechanical & Electrical Vocational and College,Gansu Tianshui 741001,China;College of Computer and Communications, Lanzhou University of Technology, Gansu Lanzhou 730050,China)
出处
《工业仪表与自动化装置》
2020年第6期75-79,共5页
Industrial Instrumentation & Automation
基金
2019年甘肃省高校创新基金项目(2019A-235)
2019年天水市科技计划支撑项目(2019-GXJSK-1338)。
