摘要
Single event effect(SEE)caused by near orbit terrestrial ions in integrated circuit(ICs)are the major threaten to stability of space station and satellites.Adopting the radiation hardening designed ICs could enormously reduce the risk of SEEs for spacecraft[1;2].Accelerator microbeams can analysis and study the ion hit induced charge or determined the SEE susceptibility locations in electronic devices,and they have been the powerful tools for fundamental mechanism study of SEEs and radiation hardened technique development for high performance electronic devices[3;4].
