摘要
提出了一种全芯片光源掩模联合优化的关键图形筛选方法,用图形的主要频率表征图形的特征,用主要频率的位置和轮廓信息描述主要频率在频域上的分布特征。设计了相应的主要频率提取方法、覆盖规则、聚类方法以及关键图形筛选方法,实现了全芯片光源掩模联合优化的关键图形筛选。采用荷兰ASML公司的商用计算光刻软件Tachyon进行了仿真验证,与ASML公司同类技术的对比结果表明,本方法获得的工艺窗口优于ASML Tachyon方法。
In this paper, a critical pattern selection method for full-chip source mask optimization is proposed. The critical frequency of the pattern represents the characteristics of the pattern. The location and contour information of critical frequency are used to describe the distribution characteristics of the critical frequency in the frequency domain. The corresponding critical frequency extraction method, covering rules, grouping method, and critical pattern selection method are designed to realize the critical pattern selection of the full-chip source mask optimization. Commercial computational lithography software Tachyon of ASML company is used for simulation verification. The comparison with the similar technique of ASML company shows that the process window obtained by this method is better than the ASML Tachyon method.
作者
廖陆峰
李思坤
王向朝
张利斌
张双
高澎铮
韦亚一
施伟杰
Lufeng Liao;Sikun Li;Xiangzhao Wang;Libin Zhang;Shuang Zhang;Pengzheng Gao;Yayi Wei;Weijie Shi(Laboratory of Information Optics and Opto-Electronic Technology,Shanghai Institute of Optics and Fine Mechanics,Chinese Academy of Sciences,Shanghai 201800,China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China;Integrated Circuit Advanced Process R&D Center,Institute of Microelectronics of Chinese Academy of Sciences,Beijing 100029,China;Dongfang Jingyuan Electron Limited,Beijing 100176,China)
出处
《光学学报》
EI
CAS
CSCD
北大核心
2020年第21期126-136,共11页
Acta Optica Sinica
基金
国家02科技重大专项(2017ZX02101004-002,2017ZX02101004)
上海市自然科学基金(17ZR1434100)。
关键词
光学设计
光刻
分辨率增强技术
光源掩模联合优化
图形筛选
optical design
lithography
resolution enhancement techniques
source mask optimization
pattern selection
