摘要
影响量子点光致发光特性的因素较多,除了腐蚀剂组分、腐蚀剂配比、腐蚀次数、超声振动时长及层析裁剪的高速离心超重力系数等因素外,量子点溶液浓度也起到很重要的作用。但截至目前,还未有关于碳化硅量子点溶液浓度对其光致发光影响的报道。为了深入了解影响碳化硅量子点发光特性的因素及其机理,本研究利用荧光分光光度计测试不同浓度量子点水相溶液的发射光谱。结果表明,碳化硅量子点光致发光强度随其浓度的增加呈现先增大后减小的趋势。因此,本文详细分析了量子点溶液浓度对光致发光特性影响的物理机制。
There are many factors that affect the photoluminescence properties of quantum dots(QDs),in addition to factors such as the composition of the corrosive agent,the ratio of the corrosive agent,the number of corrosion times,the length of ultrasonic vibration and the high-speed centrifugal supergravity coefficient of tomographic cutting,the concentration of the QDs solution also plays an important role.But up to now,there is no report on the influence of the concentration of silicon carbide QDs solution on its photoluminescence.In order to understand the factors and mechanisms that affect the luminescence characteristics of silicon carbide QDs,this study used a fluorescence spec⁃trophotometer to test the emission spectra of aqueous solutions of QDs with different concentrations.The results show that the photoluminescence intensity of silicon carbide QDs increases first and then decreases with the increase of its concentration.Therefore,this paper analyzed in detail the physical mechanism of the influence of the QDs solution concentration on the photoluminescence properties.
作者
康杰
贾浩
丁紫阳
孙为云
王晓燕
KANG Jie;JIA Hao;DING Ziyang;SUN Weiyun;WANG Xiaoyan(Department of Materials Engineering of Zhengzhou Technical College,Zhengzhou Henan 450121;JIEAN HI-TECH,Zhengzhou Henan 450001)
出处
《河南科技》
2020年第35期126-128,共3页
Henan Science and Technology
关键词
碳化硅量子点
溶液浓度
光致发光强度
发射光谱
机理
silicon carbide quantum dots
concentration
photoluminescence intensity
emission spectra
mechanism
