摘要
首先测试了Cascode结构的氮化镓增强型高电子迁移率晶体管(GaN E-HEMT)的输出、转移特性曲线,分析了导通电阻、输入电容等影响开关特性的电参数。接着分析了单相逆变电路结构,研究表明,采用GaN E-HEMT可极大地减小单相逆变电路的输出滤波电容、电感的体积。最后,比较分析了影响Cascode GaN E-HEMT和Si基MOSFET的损耗参数,并基于这两种器件结构分别搭建了两种单相逆变电路。测试结果表明,工作频率为8~90 kHz时,基于Cascode GaN E-HEMT的逆变电路的转换效率为90%以上,温度维持于25.3℃~29.3℃范围。基于Cascode GaN E-HEMT的逆变电路的总体性能优于基于Si基MOSFET的逆变电路。
Firstly, the output and transfer characteristics of gallium nitride enhanced mode high electron mobility transistors(GaN E-HEMT) with the cascode structure were measured, and important electrical parameters influencing the switching characteristics, such as on-resistance and input capacitance, were analyzed based on the testing results. Secondly, the topology of single phase inverter circuit was analyzed. Studies had shown that the volumes of output filter capacitors and inductors were greatly reduced by using GaN E-HEMT. Finally, the electrical parameters affecting the energy loss of the cascode GaN E-HEMT and Si-based MOSFET were compared, and two single phase inverter circuits were constructed based on the GaN E-HEMT and Si-based MOSFET, respectively. The testing results showed that the conversion efficiency of the inverter circuit based on cascode GaN E-HEMT was above 90%, and the temperature was maintained at 25.3 ℃~29.3 ℃ while the switching frequency was in the range of 8~90 kHz. The overall performance of the inverter circuit based on cascode GaN E-HEMT was better than the inverter circuit based on Si-based MOSFET.
作者
李昊桐
陈雷雷
李金晓
顾晓峰
LI Haotong;CHEN Leilei;LI Jinxiao;GU Xiaofeng(Engineering Research Center of IoT Technology Applications(Ministry of Education),Department of Electronic Engineering,Jiangnan University,Wuxi,Jiangsu 214122,P.R.China)
出处
《微电子学》
CAS
北大核心
2020年第6期828-834,共7页
Microelectronics
基金
国家自然科学基金资助项目(61504050)
江苏省研究生科研与实践创新计划资助项目(KYCX18_1855)
中央高校基本科研业务费专项资金资助项目(JUSRP51510)。
