摘要
对用液相外延(Liquid Phase Epitaxy,LPE)方法生长的碲镉汞(HgCdTe)材料进行了闭管富汞热处理,并研究了不同的热处理时间和热处理温度对其电学性能的影响。通过对HgCdTe材料进行富汞热处理可以有效降低材料内的缺陷尺寸、密度以及位错密度,并可完成材料由p型到n型的转变。工艺中,低温热处理对HgCdTe材料的电学性能有较大影响。研究发现,随着低温热处理时间的持续增加,HgCdTe材料的载流子浓度会明显增加。而当低温热处理温度在210℃~250℃范围内变化时,保持低温热处理时间不变,热处理后HgCdTe材料的载流子浓度会在一定范围内波动(无明显变化)。通过对HgCdTe器件进行I--V曲线测试以及最终的组件测试发现,热处理后载流子浓度在1×1013~1×1014 cm-3范围内的HgCdTe芯片具有很好的测试结果。
A closed-tube mercury-rich annealing was performed on the HgCdTe material grown by the liquid phase epitaxy(LPE)method.The influence of different heat treatment time and heat treatment temperature on the electrical properties of HgCdTe material was studied.The mercury-rich heat treatment of HgCdTe material can effectively reduce the defect size,density and dislocation density in the material,and can complete the transformation of the material from p--type to n--type.In the process,the low temperature annealing has a great influence on the electrical properties of HgCdTe materials.It is found that with the continuous increase of the annealing time,the carrier concentration of HgCdTe materials will be increased significantly.When the low-temperature heat treatment temperature changes in the range of 210--250℃,keeping the low-temperature heat treatment time unchanged,the carrier concentration of the HgCdTe material after the heat treatment will fluctuate within a certain range without significant changes.Through the I--V curve test and the final component test of the HgCdTe device,it is found that the HgCdTe chip with carrier concentration in the range of 1×1013--1×1014 cm-3 after heat treatment has good test results.
作者
王鑫
赵东生
WANG Xin;ZHAO Dong-sheng(North China Research Institute of Electro-Optics, Beijing 100015, China)
出处
《红外》
CAS
2021年第1期6-10,共5页
Infrared
关键词
碲镉汞
闭管
热处理
电学性能
HgCdTe
closed-tube
annealing
electrical property
