摘要
在室温下使用射频磁控溅射技术,在表面长有100 nm厚的氧化硅绝缘层的硅衬底上制备了MoZnO薄膜及其薄膜晶体管(TFTs).研究了溅射过程中氧氩比对MoZnO薄膜及其TFT性能的影响,并采用X射线衍射仪(XRD)表征MoZnO薄膜的结晶特性,用紫外可见分光光度计来表征MoZnO薄膜的光学特性.结果显示,不同氧氩比下制备的MoZnO薄膜均呈现(002)晶面择优生长,平均透过率均在90%以上.氧氩比为25∶75时器件性能最佳,电流开关比为3.42×10^7,阈值电压为17.8 V,亚阈值摆幅为4.2 V^-1·decade^-1,载流子迁移率为0.72 cm^2·V^-1,界面缺陷态密度Nit为3.04×10^18 cm^-2·eV^-1.
MoZnO thin films and thin film transistors(TFTs)were prepared on a silicon substrate with a 100nm thick silicon oxide insulating layer on the surface using RF magnetron sputtering technology at room temperature.The effect of oxygen-argon ratio on the performance of MoZnO film and its TFT during the sputtering process was studied.X-ray diffractometer(XRD)was used to characterize the crystalline characteristics of MoZnO film,and ultraviolet-visible spectrophotometer was used to characterize the optical characteristics of MoZnO film.It is shown that the MoZnO thin films prepared under different oxygen-argon ratios all exhibit preferential growth of(002)crystal planes,and the average transmittance is above 90%.The device performance is best when the oxygen-argon ratio is 25∶75,the current switching ratio is 3.42×10^7,the threshold voltage is 17.8 V,the sub-threshold swing is 4.2 V^-1·decade^-1,the carrier mobility is 0.72 cm^2·V^-1 and the interface defect state density Nit is 3.04×10^18 cm^-2·eV^-1.
作者
刘建文
高晓红
岳廷峰
孟冰
付钰
LIU Jian-wen;GAO Xiao-hong;YUE Ting-feng;MENG Bing;FU Yu(School of electrical and computer engineering,Jilin Jianzhu university,Changchun 130118,China)
出处
《吉林建筑大学学报》
2020年第6期77-81,共5页
Journal of Jilin Jianzhu University
关键词
MoZnO薄膜晶体管
氧氩比
磁控溅射
MoZnO thin film transistor
ratio of oxygen to argon
magnetron sputtering
