摘要
为了确认半导体器件较低的发射率对显微红外测温结果的影响,采用研制的半导体材料和金属材料靶标进行了一系列验证实验,分析了发射率对显微红外热像仪测温准确度的影响。研制了带有铂电阻结构的Ga As材料靶标和Au材料靶标,用显微红外热像仪对黑体和研制的2种靶标进行了不同温度下的测试,在110℃条件下,黑体、Ga As、Au 3种材料的温度偏差为1.9,3.7,7.9℃。测试结果表明,材料发射率越低,测温误差越大,且误差会随着温度的升高而增大。利用显微红外热像仪进行半导体器件温度测量时,需要考虑发射率的影响。
To confirm the influence of the lower emissivity of the semiconductor device on the microscopic infrared temperature measurement results,a series of verification experiments was carried out using the developed semiconductor materials and metal material targets,and the effect why the emissivity affects the accuracy of micro-infrared thermography was analyzed. The semiconductor material target with platinum resistance structure,Ga As and Au,were developed. The black body and the developed two targets were tested at different temperatures using micro-thermal infrared spectroscopy.The temperature deviations of the three materials are 1. 9 ℃,3. 7 ℃,and 7. 9 ℃ at a temperature of 110 ℃,the test results show that the lower the material emissivity,the greater the temperature measurement error,and the error increases with the increase of the temperature. So,it is necessary to consider the influence of emissivity when using micro-infrared camera to measure the temperature of the semiconductor devices.
作者
韩伟
刘岩
杜蕾
郑世棋
翟玉卫
梁法国
HAN Wei;LIU Yan;DU Lei;ZHENG Shi-qi;ZHAI Yu-wei;LIANG Fa-guo(The 13th Research Institute of CETC,Shijiazhuang,Hebei 050051,China)
出处
《计量学报》
CSCD
北大核心
2021年第1期35-40,共6页
Acta Metrologica Sinica
关键词
计量学
发射率
半导体器件
显微红外热像仪
靶标
metrology
emissivity
semiconductor device
infrared microscopic thermographic
target
