摘要
介绍了一种基于扩展外腔和主振荡功率放大架构的780 nm片上集成窄线宽半导体激光器的设计方法。在激光器结构设计描述的基础上,介绍了主振荡功率放大光路设计、隔离器参数设计、尾纤光路设计的方法与仿真结果。基于该设计完成了780 nm片上集成窄线宽半导体激光器的研制,介绍了参数实现情况,并对基于零拍法的激光线宽测试方法和测试系统搭建进行了说明。借助于该测试系统,对所研制激光器的线宽参数进行了测试。测试结果表明,设计的激光器件可以实现线宽小于50 kHz@20μs的激光输出,可应用于原子钟等领域。
A 780 nm on-chip integrated narrow linewidth semiconductor laser device is introduced in this paper,and this device is based on external cavity and master oscillator power amplifier structure(ECDL+MOPA).After introducing the main structure and operation principle of this laser diode,the design and simulation results of MOPA optical path,isolator parameters and pigtail optical path are described in details.Then the laser diode is realized and the main specification is indicated.After that,the laser linewidth test plan based on homodyne method and the detailed experiment setup are explained.This laser device is tested via the method introduced in this article,and it is proved that the output laser beam with linewidth smaller than 50 kHz@20μs is realized.The related technology can be applied in atomic clock or other atomic interference fields.
作者
张蕾
ZHANG Lei(The 4808Armament Repair Factoty of PLA,Qingdao 266000,China)
出处
《光学与光电技术》
2021年第1期42-47,60,共7页
Optics & Optoelectronic Technology
关键词
半导体激光器
窄线宽
扩展外腔
主振荡功率放大
体全息布拉格光栅
semiconductor laser
narrow linewidth
extend cavity
master oscillator power amplifier
volume holographic Bragg grating
